Apparatus and methods for immersion lithography
A lithography process and lithography technology, which is applied in photography, microlithography exposure equipment, photolithography process of pattern surface, etc., can solve the problems of pattern distortion pattern, general product without structure, loss, etc.
Inactive Publication Date: 2007-03-21
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
However, current immersion lithography methods suffer from pattern loss caused by microbubbles formed in deionized water, pattern distortion, and other issues
[0003] It can be seen that the above-mentioned existing immersion lithography technology obviously still has inconvenience and defects in product structure, manufacturing method and use, and needs to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general products do not have a suitable structure to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve
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[0050] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, below in conjunction with the accompanying drawings and preferred embodiments, the specific implementation, structure, The manufacturing method, steps, features and effects thereof are described in detail below.
[0051] Please refer to FIG. 1 , which is a schematic diagram illustrating an immersion lithography system 100 according to an embodiment of the present invention, wherein a substrate 110 is undergoing an immersion lithography process. The substrate 110 may be a semiconductor wafer having a base semiconductor, a compound semiconductor, an alloy semiconductor, or a combination thereof. The semiconductor wafer may include one or more materials to be patterned, such as polysilicon, metals, and / or dielectric materials. The substrate 110 may further include a patterned layer 120 formed thereon, and the patterned layer 120 may be a p...
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The present disclosure provides an immersion lithography system. The system includes: an imaging lens having a front surface, a substrate stage positioned underlying the front surface of the imaging lens, and an immersion fluid retaining structure configured to hold a first fluid at least partially filling a space between the front surface and a substrate on the substrate stage. The immersion fluid retaining structure further comprises at least one of: a first inlet positioned proximate the imaging lens and coupled to a vacuum pump system, the first inlet operable to provide the first fluid to the space between the front surface and the substrate, and a second inlet positioned proximate the imaging lens and operable to provide a second fluid on the substrate.
Description
technical field [0001] The present invention relates to an immersion (Immersion) lithography technology, in particular to a lithography method with enhanced depth of focus (Depth of Focus). Background technique [0002] Immersion lithography typically involves exposing the coated photoresist to a pattern through deionized water (DIW) filling the space between the projection lens and the photoresist layer to obtain higher resolution. Immersion lithography can include various process steps such as photoresist coating, pre-bake, immersion exposure, post-exposure bake, development, and hard bake. However, the current immersion lithography method suffers from pattern defects, pattern distortion, and pattern loss among other problems caused by microbubbles formed in deionized water. [0003] It can be seen that the above-mentioned existing immersion lithography technology obviously still has inconveniences and defects in product structure, manufacturing method and use, and needs...
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IPC IPC(8): G03F7/20H01L21/00
CPCG03F7/70341G03F7/2041
Inventor 张庆裕林进祥
Owner TAIWAN SEMICON MFG CO LTD