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Light emitting device and method for fabricating the same

A light-emitting device and device technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of difficulty in reproducing the shape of nanostructures with predetermined length and thickness, high system cost, poor yield rate, etc.

Active Publication Date: 2007-04-04
LG ELECTRONICS INC +1
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AI Technical Summary

Problems solved by technology

However, there is a disadvantage in the growth process that it is very difficult to grow epitaxial layers of devices with nanostructures, and it is difficult to reproduce the shape of nanostructures with a predetermined length and thickness
[0019] Although fabrication of micro-LEDs and nanorod LEDs by photolithographically etching a patterned surface reduces stress, thereby improving light extraction efficiency, and enhancing internal efficiency, using semiconductor process technology (e.g., photolithography) Another disadvantage of the nanostructure fabrication method is poor yield and high system cost

Method used

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  • Light emitting device and method for fabricating the same
  • Light emitting device and method for fabricating the same
  • Light emitting device and method for fabricating the same

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Embodiment Construction

[0038] The following will describe in detail in conjunction with the embodiments of the present invention with reference to the accompanying drawings.

[0039]3a and 3b are schematic cross-sectional views of a light emitting device according to the invention. 3a, the light emitting device includes: a substrate (300); a first layer (311) having a first polarity formed on the substrate (300), a part of the first layer (311) is removed and a plurality of nanogrooves ( 315) formed on the unremoved region of the first layer (311); an active layer (321) formed on the unremoved first layer (311); formed on the active layer (321) and having a second layer (331) of opposite polarity to the first layer (311); a first electrode (381) formed on the second layer (331); and an electrode formed on the removed first layer (311) A second electrode (382).

[0040] The second layer (331) may further include a transparent electrode thereon, and the first electrode may be formed on the transpare...

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Abstract

A light emitting device and a method for fabricating the same are disclosed, whereby a thin mask film is changed to agglomerates by a simple thermal treatment process, and a plurality of nano openings, each opening spaced a distance apart, are formed in the agglomerates, a light emitting structure exposed to the nano openings is etched to form nano grooves and nano openings therein, enabling to enhance a light emitting area and to reduce the totally reflected light for an improvement of the light extraction efficiency.

Description

technical field [0001] The invention relates to a light emitting device and a manufacturing method thereof. Typically, a light emitting device is a light source having a certain wavelength, which is used for various purposes, for example, a light source and a display. Background technique [0002] Most light generated within a light emitting device is confined within the light emitting device by reflection above the critical angle at an interface between two materials, such as a semiconductor and air. That is, light incident on a surface at an angle greater than the critical angle will not pass through but be totally reflected (TIR). [0003] FIG. 1 conceptually shows the optical path formed between two materials due to different refractive indices according to the prior art. [0004] According to Snell's law of formula 1, when light is directed from a material with a refractive index n1 to another material with a refractive index n2, if the incident angle is smaller than ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/08
CPCH01L33/22H01L33/08H01L33/0095H01L2933/0083
Inventor 金钟旭曹贤敬
Owner LG ELECTRONICS INC
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