An improved simulation model of high-voltage device and its application method

Abstract

The invention discloses an improved simulation model of high voltage component, a variable resistance which changes according to the voltage and temperature, is cascaded on the transistor drain base on the common SPICE component model under low pressure to realize the gate voltage of high-pressure area to control weaken effect of transistor current capability, and increase the separated effect of current controlling current source simulation high voltage component; the resistance possesses the function relationship with the voltage put on the resistance; the transistor drain connects with the source pole by the current control current source to stimulate the ionization effect of high-voltage transistor. In the invention the BSIM3 model and said improved simulation model of high voltage component are combined to form the high voltage component SPICE model, and then calls the parameters to fit the actually detected value: the resistance R0, the coefficients of voltage VC1,VC2,VC3,VC4,and the coefficients of temperature TC1, TC2 and so on. The invention can improve the convenience to use the high voltage model, improve the working efficiency and accuracy of designing integrated circuit, reduce the design cycle and cut back cost.

Description

technical field [0001] The invention relates to a circuit design simulation model and software, in particular to an improved high-voltage device simulation model and an application method thereof. Background technique [0002] At present, the device simulation model plays a very important role in the design of integrated circuits. It can greatly shorten the design and production cycle of products, improve the yield of products, save costs and so on. At the same time, high-voltage devices are more and more widely used in integrated circuit products, such as liquid crystal display drivers (LCD Driver), etc., but due to the lack of high-efficiency and concise high-voltage device models, and there is no recognized unified standard, it has been obtained on ordinary transistors. The widely used and traditional BSIM3 (Berkeleyshort channel insulated gate field effect transistor model) model cannot simulate the performance of high-voltage devices well, especially its performance und...

AI Technical Summary

Problems solved by technology

At the same time, high-voltage devices are more and more widely used in integrated circuit products, such as liquid crystal display drivers (LCD Driver), etc., but due to the lack of high-efficiency and concise high-voltage device models, and there is no recognized unified standard, it has been obtained on ordinary transistors. The widely used and traditional BSIM3 (Berkeleyshort channel insulated gate field effect transistor model) model cannot simulate the performance of high-voltage devices well, especially its performance under high voltage, which has caused great inconvenience to the design of high-voltage integrated circuits and huge loss

Images