3-D magnetic-field sensor integrated by planes, preparing method and use

A three-dimensional magnetic field and magnetic sensor technology, applied in the direction of the size/direction of the magnetic field, three-component magnetometer, instruments, etc., can solve the problems of high cost, difficulty in ensuring stability and consistency, etc., and achieve high production cost and reduce The effect of volume and stability improvement

Active Publication Date: 2007-06-13
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF0 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the defects that the magnetic field sensor of the prior art can only combine sensors with different sensitive magnetic field directions to detect the three-dimensional magnetic field, the cost is high, and the stability and consistency are difficult to be guaranteed. The newly developed magnetic tunnel junction material (TMR) and giant magn

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • 3-D magnetic-field sensor integrated by planes, preparing method and use

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1, prepare a kind of planar integrated three-dimensional magnetic field sensor with tunnel junction magnetoresistance (TMR) element

[0043] 1), choose a Si-SiO with a thickness of 1mm 2 The substrate is used as the base 1, and the vacuum is better than 5×10 on the magnetron sputtering equipment -5 Pa, the deposition rate is 0.1nm / s, and the argon pressure during deposition is the condition of 0.07Pa, depositing a 5nm Ta buffer layer 2 on the substrate;

[0044] 2) Select a metal mask, which has exactly the same shape as the substrate, and has a 5mm×5mm square hole in the lower left corner. Use the metal mask to shield the substrate and the buffer layer, and use a vacuum better than 5×10 on the magnetron sputtering equipment -5 Pa, the deposition rate is 0.1nm / s, and the argon pressure is the condition of 0.07Pa. On the buffer layer 2, each layer of the first magnetic sensor 72 is deposited successively. At first, the IrMn of 10nm is deposited as the first ...

Embodiment 2

[0053] Embodiment 2, prepare a kind of planar integrated three-dimensional magnetic field sensor with giant magnetoresistance (GMR) element

[0054] 1), choose a Si-SiO with a thickness of 1mm 2 The substrate is used as the base 1, and the vacuum is better than 5×10 on the magnetron sputtering equipment -5 Pa, the deposition rate is 0.1nm / s, and the argon pressure during deposition is the condition of 0.07Pa, depositing a 5nm Ta buffer layer 2 on the substrate;

[0055] 2) Select a metal mask, which has exactly the same shape as the substrate, and has a 3mm×3mm square hole in the lower left corner. Use the metal mask to shield the substrate and the buffer layer, and use a vacuum better than 5×10 on the magnetron sputtering equipment -5 Pa, the deposition rate is 0.1nm / s, and the argon pressure is the condition of 0.07Pa. On the buffer layer 2, each layer of the first magnetic sensor 72 is deposited successively. At first, the IrMn of 10nm is deposited as the first antiferrom...

Embodiment 3～50

[0065] According to the same method as in Example 1 and Example 2, a planar integrated three-dimensional magnetic field sensor was prepared, and the materials and thicknesses of each layer of the magnetic multilayer film are listed in Tables 1-8.

[0066] Table 1, the structure of the magnetic multilayer film for three-dimensional integrated geomagnetic field sensor of the present invention

[0067] Example

3

4

5

6

7

8

film base

Element

Si-SiO 2

Si-SiO 2

Si-SiO 2

Si-SiO 2

Si-SiO 2

Si-SiO 2

thickness

1mm

1mm

1mm

1mm

1mm

1mm

buffer

layer

Element

Ta

Ta

Ta

Ta

Ta

Ta

thickness

3nm

3nm

3nm

3nm

3nm

3nm

First

anti iron

magnetosphere

Element

IrMn

Fe-Mn

Pt-Mn

IrMn

Fe-Mn

Fe-Mn

thickness

2nm

2nm

2nm

2nm

2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a 3D magnetic field sensor integrated by planes. It includes a film base, and buffer layer, three magnetic sensor units. The 3D magnetic field sensor would be used to testing 3D magnetic field. The sensor is integrated to one chip, and the volume is decreased, and cost is lowered. The stability of sensor is improved.

Description

technical field [0001] The present invention relates to a sensor device, in particular to a sensor device with tunnel junction magnetoresistance (TMR) and giant magnetoresistance (GMR) elements capable of detecting weak magnetic fields in three-dimensional directions and its preparation method and use. Background technique [0002] Magnetic field sensors are used commercially in a wide variety of applications such as linear or ring encoders, proximity detectors, and earth field magnetometers. A common magnetic field sensor is based on the Hall effect and senses magnetic fields in the range of 100 to 1000 Oersteds (Oe). There is also a general-purpose magnetic field sensor based on the magnetoresistance (MR) effect in semiconductor or ferromagnetic materials to sense relatively small magnetic fields and magnetic fields at long distances. Traditional MR sensors operate based on the anisotropic magnetoresistance (AMR) effect, while newer MR sensors operate based on the giant ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01R33/09H01L43/10
CPCG01R33/0206
Inventor 覃启航韩秀峰王磊马明魏红祥詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap