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Thin film transistor substrate and method of fabricating same

a thin film transistor and substrate technology, applied in the field of thin film transistor substrates, can solve the problems of poor achieve the effects of reducing the influence of bias stress, preventing electron trapping, and improving the reliability of the thin film transistor substra

Active Publication Date: 2022-02-01
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a thin film transistor substrate and a method of fabricating the same. The gate insulating layer is made of two layers, one of which is a silicon oxide layer and the other is a silicon nitride layer. The silicon nitride layer contains hydrogen ions that can reduce the influence of bias stress on the thin film transistor substrate and improve its reliability. Additionally, the silicon nitride layer has a high dielectric constant, which can enhance the field effect mobility of the thin film transistor substrate.

Problems solved by technology

Characteristics of the thin film transistor substrate are greatly affected, and this results in poor reliability of the thin film transistor substrate.

Method used

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  • Thin film transistor substrate and method of fabricating same

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Embodiment Construction

[0032]The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, but not all embodiments. All other embodiments obtained by a person skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.

[0033]In the description of the present application, it is to be understood that the terms of the orientation or positional relationship of the indications terms “center”, “longitudinal”, “transverse”, “length”, “width”, “thickness”, “upper”, “lower”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, “outer”, “clockwise”, “counterclockwise”, and the like are based on the orientation or positional relationship shown in the draw...

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Abstract

A thin film transistor substrate and a method of fabricating same are provided.The thin film transistor substrate includes a substrate, a light shielding layer disposed on the substrate, a buffer layer disposed on the light shielding layer, an active layer disposed on the buffer layer, and a gate insulating layer disposed on the active layer. The gate insulating layer includes a stacked structure including a first insulating layer and a second insulating layer.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This is the U.S. National Stage of International Patent Application No. P PCT / CN2019 / 113014, filed Oct. 24, 2019, which in turn claims the benefit of Chinese Patent Application No. 201910654433.1, filed Jul. 19, 2019.FIELD OF INVENTION[0002]The present disclosure relates to the field of display panel technologies, and more particularly to a thin film transistor substrate and a method of fabricating the same.BACKGROUND OF INVENTION[0003]In the field of display technologies, flat panel display devices such as liquid crystal displays (LCDs) and organic light emitting diode (OLED) displays have gradually replaced cathode display screens, are widely used in mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers, and other consumer electronic products, and have become the mainstream in display devices.[0004]Generally, a liquid crystal display panel includes a color filter (CF) substrate, ...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L29/417H01L29/786H01L29/66H01L29/40
CPCH01L29/41733H01L29/401H01L29/66969H01L29/786H01L29/78681H01L29/78606H01L29/78633H01L29/42384H01L29/7869
Inventor MA, QIANZHOU, XINGYU
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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