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Perfluoride processing apparatus

a technology of processing apparatus and perfluoride, which is applied in the direction of mechanical apparatus, machine/engine, separation process, etc., can solve the problem of taking a long time to install these facilities

Inactive Publication Date: 2003-12-04
HITACHI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010] In accordance with this invention, it is no longer required to acquire any extra space for installation of more than one perfluoride decomposition device within the clean room, which in turn makes it possible to reduce in size or "downsize" the clean room. In particular, in the case of application to the currently established clean room also, it is no longer necessary to acquire the installation space of such perfluoride decomposition device(s) within the clean room; thus, it makes it unnecessary to move the semiconductor fabrication apparatus within the clean room in order to perform installation of such perfluoride decomposition device(s).

Problems solved by technology

Because of the installation of a variety of types of utility equipment with respect to each PFC decomposition device within the clean room, it takes much time to install these facilities.

Method used

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Examples

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embodiment 1

[0022] Embodiment 1

[0023] Prior to explanation of a perfluoride processing apparatus, that is, PFC processing apparatus, in accordance with one preferred embodiment of the present invention, a schematic configuration of a semiconductor fabrication system including a semiconductor fabrication factory will first be explained with reference to FIG. 1 below. The illustrative semiconductor fabrication system is equipped with a semiconductor fabrication factory 1, a PFC decomposition device 44, and a factory acidic gas processing equipment 46. The building of semiconductor fabrication factory 1 has therein a clean room 2. A plurality of semiconductor fabrication apparatuses including etchers such as poly-etchers 3, an oxide film etcher 5, and a metal etcher 53 are installed within the clean room 2. Also installed within the clean room 2 is a plurality of gas supply devices 48. The individual gas supply device 48 is the one that supplies gases (such as PFC gas or the like) required at etch...

embodiment 2

[0059] Embodiment 2

[0060] A PFC processing apparatus in accordance with another embodiment of the present invention will be explained with reference to FIG. 5. The PFC processing apparatus 44A of this embodiment is arranged so that the exhaust duct 28 is connected to the acidic gas removing device 47 in the PFC processing apparatus 44 shown in FIG. 1. An arrangement of the other part of PFC processing apparatus 44A is the same as that of the PFC processing apparatus 44. In this embodiment, an exhaust gas which was drained out of the acidic gas removing device 22 of the PFC decomposition device 9 is supplied through the exhaust gas duct 28 to the acidic gas removing device 47. Due to this, in case the acidic gas removing device 22 decreases in acidic gas removal functionality, any acidic gas to be produced by PFC decomposition within the reaction unit 16 can be removed by the acidic gas removing device 47. In this way, it is possible to use the acidic gas removing device 47 as a back...

embodiment 3

[0062] Embodiment 3

[0063] A PFC processing apparatus in accordance with still another embodiment of the present invention will be explained below. The PFC processing apparatus 44B of this embodiment is arranged so that the PFC decomposition device 9 in the PFC processing apparatus 44 shown in FIG. 1 is replaced by a PFC decomposition device 9C shown in FIG. 6. The other arrangement of the PFC processing apparatus 44B is the same as that of the PFC processing apparatus 44. An arrangement of the PFC decomposition device 9C that is used in the PFC processing apparatus 44B will be explained. Whereas the PFC decomposition device 9 is a wet-type PFC decomposition device in which waste water generates the PFC decomposition device 9C used in this embodiment is a dry-type PFC decomposition device in which no waste water generates.

[0064] The PFC decomposition device 9C is equipped with a reaction unit 11, filer devices 65, 66 and fine-particle / powder silo 81. The duct 7 is coupled to a lower-...

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Abstract

A plurality of etchers such as poly-etchers 3 or the like are installed within a clean room 2. A duct 7 that is connected to all the etchers is connected to a PFC decomposition device 9, which is installed outside of the clean room 2. An exhaust gas which contains PFC as drained out of all the etchers within the clean room 2 is supplied by the duct 7 to the inner space of PFC decomposition device 9. After having heated up within the PFC decomposition device 9, the PFC is decomposed by the action of a catalyst which is filled within the PFC decomposition device 9. It is no longer required to provide a space for installation of the PFC decomposition device 9 in the clean room 2 with the semiconductor fabrication apparatus or the liquid crystal manufacturing apparatus installed therein, thus enabling size reduction or "downsizing" of the clean room. It is possible to reduce the size of a clean room in which a semiconductor fabricating apparatus or a liquid crystal manufacturing apparatus is installed.

Description

[0001] 1. Field of the Invention[0002] The present invention relates generally to perfluoride processing apparatus and, more particularly, to perfluoride processing apparatus suitable for use during processing of perfluoride-carbon or perfluocarbon (PFC) gases which generate in semiconductor fabrication processes and liquid crystal manufacturing processes or the like.[0003] 2. Prior Art[0004] In the semiconductor fabrication and liquid crystal manufacturing processes, PFC gases are used as an etching gas of semiconductor and liquid crystal materials, a cleaning gas of etchers, and a cleaning gas of chemical vapor deposition (CVD) equipment. However, PFC gases are the ones that are extremely significant in anathermal coefficient to an extent that it is ten thousand to several thousand times greater than that of CO.sub.2. From a viewpoint of production efficiency without consumption of a total amount of PFC gas, the currently available semiconductor / liquid-crystal manufacturing proces...

Claims

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Application Information

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IPC IPC(8): B01D53/34B01D53/70B01D53/46B01D53/68B01D53/86
CPCB01D53/8662Y02C20/30B01D53/869B01D53/00
Inventor KOKUN, RITAMATA, SHIN
Owner HITACHI LTD
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