Plasma processing device and plasma processing method

a plasma processing and plasma technology, applied in the direction of electrical equipment, basic electric elements, electric discharge tubes, etc., can solve the problems of difficult gas optimization, process with a sufficiently high uniformity may not be executed, and process uniformity may not be lowered, so as to achieve high uniformity and high uniformity

Inactive Publication Date: 2004-07-01
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

0088] In the above-described structure, the electrode plate 20 and the shield ring 26 form a flat surface with respect to a plasma generation area. In this case, a step is not formed between the exposed surface of the electrode plate 20 and the major surface of the shield ring 26. Accordingly, the flow of the process gas which is sprayed though the gas holes 19 is not disturbed at such a step portion and the flow of the process gas which is sprayed through the entire gas holes 19 becomes nearly uniform. This allows the process gas to be supplied to the surface of the wafer W with high uniformity so that a process with high uniformity is performed on the wafer W.

Problems solved by technology

This makes the gas supply at the center portion and end portion of the to-be-processed subject W uneven, thus lowering the process uniformity.
Therefore, a process with a sufficiently high uniformity may not be executed.
It is therefore difficult to optimize the gas blowoff diameter and the upper electrode diameter by independently varying them to thereby improve the process uniformity.

Method used

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  • Plasma processing device and plasma processing method
  • Plasma processing device and plasma processing method
  • Plasma processing device and plasma processing method

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Experimental program
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first embodiment

[0099] As described above, the first embodiment takes such a structure that the electrode plate 20 is formed into a projection type and the exposed surface of the electrode plate 20 and the major surface of the shield ring 26 form a flat surface. This structure eliminates the step between the electrode plate 20 and the shield ring 26, and can reduce or eliminate the disturbance of the process gas above the wafer W. Accordingly, the pressure above the wafer W becomes nearly uniform on the entire top surface so that a process with high uniformity can be performed on the entire top surface. Further, the pressure above the wafer W can be kept at a relatively low pressure so that a highly reliable process with suppressed generation of voids can be executed.

[0100] In the first embodiment, the height of the projection 20a of the electrode plate 20 is approximately equal to the thickness of the shield ring 26 and the electrode plate 20 and the shield ring 26 form substantially the same surf...

second embodiment

[0101] The second embodiment of the invention will be discussed below. A plasma process system 1 according to the second embodiment has nearly the same structure as the plasma process system 1 of the first embodiment illustrated in FIG. 1. FIG. 6 shows an enlarged diagram of near the upper and lower electrodes of the second embodiment. In the diagram, same reference symbols are given to those portions which are the same as those in FIGS. 1 and 2 and the description will be omitted for easier understanding.

[0102] In the second embodiment, the electrode plate 20 has a structure similar to that of the first embodiment. That is, the electrode plate 20 is formed into a projection type and the exposed surface (bottom surface) of the projection 20a and the exposed surface (bottom surface) of the shield ring 26 form approximately the same plane surface. The diameter of the opening of the focus ring 17 is set approximately equal to the diameter of the wafer W.

[0103] The ratio of the diameter...

example 2

[0106] FIG. 8 shows the results of performing a film deposition process while changing the electrode diameter ratio (D2 / D1) and checking the uniformity of the deposition speed on the top surface of the wafer W. The deposition conditions here were SiH.sub.4 / SiF.sub.4 / O.sub.2 / Ar=22 / 28 / 250 / -50 (sccm), pressure of 1.3 Pa, and the electrode gap of 20 mm. The deposition speed uniformity was calculated from (deposition speed uniformity: %)=((maximum deposition speed)+(minimum deposition speed)) / (average deposition speed).times.2).times.100.

[0107] It is understood from the results shown in FIG. 8 that when the electrode diameter ratio (D2 / D1) lies in the range of 1.2 to 1.5, the deposition speed uniformity is equal to or less than 5% and a film is formed with high uniformity on the entire top surface of the wafer W. It is also apparent that higher uniformity is shown particularly when the electrode diameter ratio is in the range of 1.25 to 1.45.

[0108] When the diameters of the upper and low...

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Abstract

That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

Description

[0001] The present invention relates to a plasma process system and a plasma process method which perform processes, such as film deposition and etching, using a plasma.[0002] A plasma process system which processes the surface of a substrate, such as a semiconductor wafer, using a plasma is used in a fabrication process for a liquid crystal display or the like. As plasma process systems, there are, for example, a plasma etching system which performs etching on a substrate and a plasma CVD system which performs chemical vapor deposition (Chemical Vapor Deposition: CVD). Of them, a parallel plate plasma process system is widely used because it has an excellent process uniformity and its system structure is relatively simple.[0003] The structure of a parallel plate plasma process system is shown in FIG. 17. As shown in FIG. 17, a plasma process system 101 comprises a chamber 102, a shower electrode 103 which feeds a process gas into the chamber 102 and constitutes an upper electrode, ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01J37/32
CPCH01J37/32009H01J37/32541H01J37/3244H01L21/3065
Inventor TAKATSUKI, KOICHIYOSHITAKA, HIRAKUASHIGAKI, SHIGEOINOUE, YOICHIAKAHORI, TAKASHIISHIZUKA, SHUUICHIABE, SYOICHISUZUKI, TAKASHIKAWAMURA, KOHEIMIYOSHI, HIDENORICHUNG, GISHIOSHIMA, YASUHIROTAKAHASHI, HIROYUKI
Owner TOKYO ELECTRON LTD
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