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Vehicular lamp unit and vehicular lamp

A vehicular lamp unit includes a projection lens disposed on an optical axis extending in a vehicular longitudinal direction; a light source disposed rearward of a rear side focal point of the projection lens; a reflector reflecting direct light from the light source forward towards the optical axis; a shade disposed between the projection lens and the light source such that the shade blocks a part of reflected light from the reflector and a part of the direct light from the light source to form a cut-off line of a light distribution pattern; a first reflective surface formed on a tip portion of the reflector such that the first reflective surface reflects a part of the direct light from the light source downward to the front of the shade; and a second reflective surface formed on the front of the shade and below the rear side focal point of the projection lens such that the second reflective surface reflects reflected light from the first reflective surface towards the projection lens so that upward directed radiated light is emitted from the projection lens. The second reflective surface includes a vertically divided upper-side second reflective surface and lower-side second reflective surface. Radiated light provided by the lower-side second reflective surface radiates above radiated light provided by the upper-side second reflective surface.
Owner:KOITO MFG CO LTD

Semiconductor device and method for manufacturing the same

A first thin film diode (100A) has a first semiconductor layer (10A) and a first light blocking layer (12A) disposed on the substrate side of the first semiconductor layer. A second thin film diode (100B) has a second semiconductor layer (10B) and a second light blocking layer (12B) disposed on the substrate side of the second semiconductor layer. An insulating film (14) is formed between the first semiconductor layer (10A) and the first light blocking layer (12A) and between the second semiconductor layer (10B) and the second light blocking layer (12B). A thickness D1 of a portion of the insulating film (14) positioned between the first semiconductor layer (10A) and the first light blocking layer (12A) is different from a thickness D2 of a portion of the insulating film (14) positioned between the second semiconductor layer (10B) and the second light blocking layer (12B). The intensity of light in a first wavelength region incident on the first semiconductor layer (10A) is higher than the intensity of light in the first wavelength region incident on the second semiconductor layer (10B). The intensity of light in a second wavelength region including a wavelength longer than the maximum wavelength of the first wavelength region incident on the second semiconductor layer (10B) is higher than the intensity of light in the second wavelength region incident on the first semiconductor layer (10A).
Owner:SHARP KK
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