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Semiconductor device and method for fabricating the same

a semiconductor device and semiconductor technology, applied in the direction of capacitors, basic electric elements, electrical appliances, etc., can solve the problems of unwanted radiation, electromagnetic wave noise generated by electronic units, adverse metal interconnections, etc., and achieve the disadvantage of deteriorating electrical characteristics of the capacitor device, and the effect of unwanted radiation

Inactive Publication Date: 2005-03-03
MATSUSHITA ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

"The present invention relates to a semiconductor device and a method for fabricating it. The technical effect of the invention is to prevent titanium atoms in a titanium film from passing through the grain boundary of metal crystals composing the upper electrode of a capacitor device and diffusing into the capacitive insulating film during a heat treatment on metal interconnections. This is achieved by depositing an anti-diffusion film between the capacitive upper electrode and the metal interconnection to prevent the passage of titanium atoms. The anti-diffusion film can be a metal nitride or metal oxide film with conductivity, and the titanium film can be an adhesive layer or a titanium nitride film. The semiconductor device includes a capacitor device with a reliable capacitance and a highly reliable nonvolatile memory or dynamic memory."

Problems solved by technology

As semiconductor devices have been miniaturized, unwanted radiation, i.e., electromagnetic wave noise generated from electronic units, has become a serious problem.
Thus, during the heat treatment conducted to improve the adhesion between the metal interconnections and the interlevel insulating film, the titanium atoms in the titanium film constituting the metal interconnections adversely pass through the grain boundary of the column like crystals of the platinum film constituting the upper electrode so as to diffuse into the capacitive insulating film.
As a result, since the composition of the ferroelectric film or the high dielectric film constituting the capacitive insulating film is varied, the electrical characteristics of the capacitor device are disadvantageously deteriorated.
Thus, in the latter case, the titanium atoms in the titanium film constituting the metal interconnections also adversely pass through the grain boundary of the column like crystals constituting the upper electrode so as to diffuse into the capacitive insulating film.

Method used

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  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same
  • Semiconductor device and method for fabricating the same

Examples

Experimental program
Comparison scheme
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embodiment 1

[0055] Embodiment 1

[0056] Hereinafter, a semiconductor device according to the first embodiment of the present invention will be described with reference to FIG. 1.

[0057]FIG. 1 illustrates a cross-sectional structure of the semiconductor device in the first embodiment. As shown in FIG. 1, a lower electrode 11 made of a first platinum film, a capacitive insulating film 12 made of an insulating metal oxide film such as a ferroelectric film or a high dielectric film, and an upper electrode 13 made of a second platinum film are sequentially formed on a semiconductor substrate 10 made of silicon. The lower electrode 11, the capacitive insulating film 12 and the upper electrode 13 constitute a capacitor device. In this embodiment, the size of the lower electrode 11 is larger than that of the upper electrode 13 such that a metal interconnection can be extended upward to pass by the sides of the upper electrode 13 and be electrically connected to the lower electrode 11.

[0058] An interleve...

embodiment 2

[0075] Embodiment 2

[0076] Hereinafter, a semiconductor device according to the second embodiment of the present invention will be described with reference to FIG. 2.

[0077]FIG. 2 illustrates a cross-sectional structure of the semiconductor device in the second embodiment. As shown in FIG. 2, a lower electrode 21 made of a first platinum film, a capacitive insulating film 22 made of an insulating metal oxide film such as a ferroelectric film or a high dielectric film, and an upper electrode 23 made of a second platinum film are sequentially formed on a semiconductor substrate 20 made of silicon. The lower electrode 21, the capacitive insulating film 22 and the upper electrode 23 constitute a capacitor device.

[0078] An interlevel insulating film 24 made of a silicon oxide film, for example, is deposited to cover the entire surface of the semiconductor substrate 20 as well as the capacitor device. A lower-electrode contact hole 25 and an upper-electrode contact hole 26 are formed thro...

embodiment 3

[0096] Embodiment 3

[0097] Hereinafter, a semiconductor device according to the third embodiment of the present invention will be described with reference to FIG. 4.

[0098]FIG. 4 illustrates a cross-sectional structure of the semiconductor device in the third embodiment. As shown in FIG. 4, a lower electrode 31 made of a first platinum film, a capacitive insulating film 32 made of an insulating metal oxide film such as a ferroelectric film or a high dielectric film, and an upper electrode 33 made of a second platinum film are sequentially formed on a semiconductor substrate 30 made of silicon. The lower electrode 31, the capacitive insulating film 32 and the upper electrode 33 constitute a capacitor device.

[0099] An interlevel insulating film 34 made of a silicon oxide film, a silicon nitride film or the like, is deposited to cover the entire surface of the semiconductor substrate 30 as well as the capacitor device. A lower-electrode contact hole 35 and an upper-electrode contact ho...

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Abstract

The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.

Description

BACKGROUND OF THE INVENTION [0001] The present invention generally relates to a semiconductor device and a method for fabricating the same. More particularly, the present invention relates to a semiconductor device including a capacitor device having a capacitive insulating film of insulating metal oxide film such as a ferroelectric film or a high dielectric film (i.e., a film made of a material having a high dielectric constant) and to a method for fabricating the same. [0002] In recent years, as various electronic units such as microcomputers operating at an even higher speed and with even lower power consumption have been developed, the performance of consumer-use electronic units have also been further enhanced. Correspondingly, the sizes of semiconductor devices used for these units have also been rapidly reduced drastically. [0003] As semiconductor devices have been miniaturized, unwanted radiation, i.e., electromagnetic wave noise generated from electronic units, has become a...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H10B12/00H01L21/02
CPCH01L28/55H01L21/7687
Inventor NAKAO, KEISAKUMATSUDA, AKIHIROIZUTSU, YASUFUMIITO, TOYOJIMIKAWA, TAKUMINASU, TORUNAGANO, YOSHIHISATANAKA, KEISUKEKUTSUNAI, TOSHIE
Owner MATSUSHITA ELECTRONICS CORP