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Semiconductor device, method of manufacturing the same, and apparatus for manufacturing semiconductor

Inactive Publication Date: 2005-04-21
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0022] The present invention has been achieved for solving the above problems, and an object of the present invention is to provide a semiconductor device having a structure in which refractive index matching between upper and lower films is controlled so as to minimize reflection from a light receiving element and to improve light receiving sensitivity, a method of manufacturing the semiconductor device, and an apparatus for manufacturing a semiconductor.

Problems solved by technology

However, in such a structure in which a silicon nitride film is deposited, an increase in short-wavelength sensitivity is expected due to a multiple interference effect.

Method used

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  • Semiconductor device, method of manufacturing the same, and apparatus for manufacturing semiconductor
  • Semiconductor device, method of manufacturing the same, and apparatus for manufacturing semiconductor
  • Semiconductor device, method of manufacturing the same, and apparatus for manufacturing semiconductor

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first embodiment

[0044]FIG. 1 is a sectional view showing an example of a structure of a photoelectric transducer 100 according to a first embodiment of the present invention.

[0045] In this embodiment, a refractive index matching film is provided on each of photoelectric conversion light receiving elements, and the refractive index matching film comprises an insulating compound layer represented by SiOxNy (0≦x and y) assuming that the molar ratio of silicon, oxygen and nitrogen of the insulating compound layer is 1:x:y. In addition, the oxygen content of the compound layer is the lowest at the interface with each light receiving element and the highest in an upper portion of the compound layer, and the nitrogen content of the compound layer is the highest at the interface with each light receiving element and the lowest in the upper portion of the compound layer.

[0046] In this embodiment, the refractive index of the compound layer serving as the refractive index matching film is continuously chang...

second embodiment

[0097]FIG. 9 is a sectional view showing an example of a structure of a photoelectric transducer 200 according to a second embodiment of the present invention.

[0098] The photoelectric transducer 200 shown in FIG. 9 is another example of semiconductor devices, in which a refractive index matching film 16 is formed directly on the silicon interface of each photodiode PD, and a silicon nitride single film and a gate insulating film 14 are omitted from the silicon interface so that the refractive index matching film 16 also performs the function as an anti-reflection film 15, unlike in the photoelectric transducer 100 of the first embodiment.

[0099] The photoelectric transducer 200 is preferably applied to a photocoupler, a solid-state imaging device or field-effect imaging device comprising a solid-state imaging device which receives light incident from on-chip lenses provided on a color filter. The photoelectric transducer 200 comprises, for example, a N-type silicon substrate 11. Li...

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Abstract

A semiconductor device includes a plurality of photoelectric conversion photodiodes provided on a silicon substrate, and a refractive index matching film provided on each of the photodiodes. The refractive index matching film is composed of an insulating compound layer represented by SiOxNy (0≦x and y) assuming that the molar ratio of silicon, oxygen and nitrogen of the compound layer is 1:x:y. The oxygen content of the compound layer is the lowest at the silicon interface with each photodiode and the highest in an upper portion of the compound layer, and the nitrogen content is the highest at the silicon interface with each photodiode and the lowest in the upper portion of the compound layer. Therefore, multiple reflection can be decreased to improve light receiving sensitivity, as compared with a case in which a SiN single layer and a SiO2 single layer are laminated.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates a semiconductor device suitably used for a photoelectric transducer such as a photocoupler or the like, a solid-state imaging device or field-effect imaging device comprising a semiconductor image sensor which receives light incident on an on-chip lens formed on a color filter, a method of manufacturing the semiconductor device, and an apparatus for manufacturing a semiconductor. [0003] More specifically, a refractive index matching film is provided on a photoelectric conversion light-receiving element, and a composition composed of silicon, oxygen and nitrogen which constitute the refractive index matching film is adjusted so that the refractive index of a compound layer constituting the refractive index matching film continuously changes from the refractive index of a silicon oxide film of 1.45 to the refractive index of a silicon nitride film of 2.0. As a result, reflection from the ...

Claims

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Application Information

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IPC IPC(8): H01L27/148H01L21/31H01L21/318H01L27/146H01L29/06H01L31/0216H01L31/0232H01L31/0328H01L31/0336H01L31/072H01L31/10H01L31/109H01L31/112
CPCH01L27/1462H01L27/14625H01L27/14685H01L31/1125H01L31/02165H01L31/0232H01L27/14806H01L31/02327H01L27/148
Inventor MURAKAMI, ICHIRO
Owner SONY CORP