Particle-optical projection system

Inactive Publication Date: 2005-09-15
IMS NANOFABTION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010] It is a goal of the present invention to provide a way to arbitrarily change image position and magnification, so as to compensate for deviations between the image position and the target position with respect to the axial direction (Z-direction), which may be due, in particular, to the individual geometrical properties of the target and the space charge effect of the current through each momentary pattern, taking into account the de

Problems solved by technology

An uncertainty in the position of the stage to which the wafer is mounted does also lead to deviating target positions.
Without correction or compensation, the space charge effect will vary at the same rate, with the result that not only the image position, but also the magnification and distortion will continuously change, thereby increasing the image

Method used

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Example

[0044] The preferred embodiments of the invention discussed in the following are suitable for use in the PLM2 apparatus mentioned above which has a two-stage demagnifying projection optical system after the pattern definition device which produces the patterned beam. FIG. 1 shows a schematic overview of the PLM2 apparatus inasmuch as needed for the disclosure of the present invention. For further details about the PLM2 system, the reader is referred to the US-2003-0155534-A1.

[0045] In the following, with reference to FIG. 1 (which was taken, with modifications where appropriate, from the US-2003-0155534-A1) we first discuss the technical background of the PLM2 apparatus and the Pattern Device (PD) device it contains, as far as relevant to the invention. It should be appreciated that the invention is not restricted to the embodiment discussed in the following, which merely represents one of the possible implementations of the invention.

[0046] An overview of a lithographic apparatus...

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Abstract

In a particle-optical projection system (32) a pattern (B) is imaged onto a target (tp) by means of energetic electrically charged particles. The pattern is represented in a patterned beam (pb) of said charged particles emerging from the object plane through at least one cross-over (c); it is imaged into an image (S) with a given size and distortion. To compensate for the Z-deviation of the image (S) position from the actual positioning of the target (tp) (Z denotes an axial coordinate substantially parallel to the optical axis cx), without changing the size of the image (S), the system comprises a position detection means (ZD) for measuring the Z-position of several locations of the target (tp),
    • a control means (33) for calculating modifications (cr) of selected lens parameters of the final particle-optical lens (L2) and controlling said lens parameters according to said modifications.

Description

FIELD OF THE INVENTION AND DESCRIPTION OF PRIOR ART [0001] The invention relates to the field of particle-optical projection systems and, in particular, to the adjustment of the image field position along the optical axis with the actual position of the target in a particle-optical projection system without a change of magnification or image quality. More in detail, the invention relates to the improvement of a particle-optical projection system for imaging a pattern onto a target by means of energetic electrically charged particles in a particle-beam exposure apparatus, adapted to produce, from the pattern positioned at an object plane and represented in a patterned beam of said charged particles emerging from the object plane through at least one cross-over, an image at the position of the target, with said image having a given size and distortion. [0002] In systems of this kind, the Z-position of the image plane, i.e. the position as measured along the direction of the particle b...

Claims

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Application Information

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IPC IPC(8): H01L21/027G03F7/20G11B7/09H01J37/02H01J37/147H01J37/15H01J37/20H01J37/21H01J37/304H01J37/317
CPCB82Y10/00B82Y40/00H01J37/21H01J37/304H01J2237/30455H01J2237/024H01J2237/10H01J2237/216H01J37/3177H01J37/153
Inventor BUSCHBECK, HERBERTLAMMER, GERTRAUDCHALUPKA, ALFREDNOWAK, ROBERTPLATZGUMMER, ELMARSTENGL, GERHARD
Owner IMS NANOFABTION
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