Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device includes a dielectric layer, a semiconductor layer provided above the dielectric layer, a gate dielectric layer provided above the semiconductor layer, a gate electrode provided above the gate dielectric layer, a source region and a drain region provided in the semiconductor layer, a body region other than the source region and the drain region in the semiconductor layer, and a body contact region that divides the source region in a plurality of areas and joins to the body region, wherein the body contact region is formed of a compound of a semiconductor of the semiconductor layer and a metal.

Description

RELATED APPLICATIONS [0001] This application claims priority to Japanese Patent Application No. 2004-082544 filed Mar. 22, 2004 which is hereby expressly incorporated by reference herein in its entirety. BACKGROUND [0002] 1. Technical Field [0003] The present invention relates to semiconductor devices having a so-called source-body-tie structure in which a body region and a source region are connected to each other, and methods for manufacturing the same. [0004] 2. Related Art [0005] Research and development are being made in recent years on insulated gate type transistors which are provided in a semiconductor layer (SOI layer: Silicon On Insulator layer) provided on a dielectric layer as devices that can realize lower power consumption and high-speed operation, compared to the case where transistors are formed in a semiconductor layer in a bulk state. Among insulated gate type field effect transistors provided in such a SOI layer, there are those having a source-body-tie structure ...

AI Technical Summary

Benefits of technology

[0010] In the semiconductor device of the present invention, the body region and the body contact region are connected through a Schottky junction. Accordingly, when a MOS transistor is operated, holes generated by the impact ionization phenomenon do not travel to a contact section, but can be directly absorbed by the body contact region. As a result, there is provided a semiconductor device having excellent characteristics in which holes generated in the body region can be excellently absorbed, and the substrate floating effect is reduced even when a high voltage is applied.

[0012] In the semiconductor device in accordance with the present invention, the body contact region can be formed of a silicide compound. According to this embodiment, a semiconductor device having a body contact region formed by a simpler process can be provided.

Problems solved by technology

In other words, holes generated by impact ionization are absorbed after moving a long distance, and therefore the effects of a source-body-tie structure may not be sufficiently attained under the recent demands for high-speed switching characteristics.

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