Dry etching apparatus, etching method, and method of forming a wiring

a technology of etching apparatus and wiring, applied in the direction of identification means, instruments, transistors, etc., can solve the problems of non-uniformity of substantial electric power applied to the entire surface of a substrate, etching defects, and enhancement of productivity, so as to enhance the uniformity of rectangular substrates in the plan
US20060048894A1Inactive Publication Date: 2006-03-09SEMICON ENERGY LAB CO LTD
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Publication Date
2006-03-09
Estimated Expiration
Not applicable · inactive patent

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Abstract

An etching apparatus is provided, in which a plurality of electrodes are disposed for placing a substrate, high-frequency power sources as many as electrodes are provided, and the electrodes and the high-frequency power sources are connected to each other independently. Among a plurality of electrodes, a high-frequency power applied to an electrode disposed below the central portion of the substrate and a high-frequency power applied to electrodes disposed below corner portions of the substrate are controlled respectively, whereby in-plane uniformity of etching can be enhanced.
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Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a divisional application of U.S. application Ser. No. 09 / 966,689, filed Sep. 27, 2001, now allowed, and claims the benefit of foreign priority applications filed in Japan as Serial No. 2000-305564 on Oct. 4, 2000 and as Serial No. 2001-289534 on Sep. 21, 2001. This application claims priority to each of these prior applications, and the disclosures of the prior applications are considered part of (and are incorporated by reference in) the disclosure of this application.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a dry etching apparatus. In particular, the present invention relates to an etching apparatus using plasma generated by applying a magnetic field or an electric field to a reaction gas introduced into a low-pressure chamber, and an etching method.

[0004] 2. Description of the Related Art

[0005] Conventionally, there is a limit to a treatment ability of ...

Claims

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