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Light emitting diode and method for improving luminescence efficiency thereof

a technology of light emitting diodes and luminescence efficiency, which is applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical devices, etc., can solve the problems of poor heat dissipation capacity of prior art materials, and poor light dissipation efficiency of led b>100/b>, etc., to improve the luminescence efficiency of led

Inactive Publication Date: 2007-01-04
INTELLECTUAL VENTURES FUND 82
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010] Accordingly, the object of the present invention is to provide a light emitting diode (LED) to improve luminescence efficiency and heat dissipating capacity.
[0011] Accordingly, another object of the present invention is to provide a method for improving luminescence efficiency of LEDs, which is suitable to enhance the luminescence efficiency and the heat dissipating capacity of the LEDs.
[0014] According to still another embodiment of the present invention, a method for improving luminescence efficiency of an LED is provided. First, an LED is provided. The LED at least includes a semiconductor layer, a first electrode and a second electrode. Then, a diamond-like carbon layer is formed on the LED. The diamond-like carbon layer covers on the semiconductor layer and exposes at least a portion of the first electrode.
[0015] According to still another embodiment of the present invention, a method for improving luminescence efficiency of an LED is provided. First, an LED is provided. The LED at least includes a semiconductor layer, a first electrode, a second electrode and a passivation layer. Wherein, the passivation layer covers on the semiconductor layer and exposes at least a portion of the first electrode. Then, a surface roughening step is proceeded on the passivation layer.
[0016] In conclusion, since the diamond-like carbon layer with high heat dissipating capacity is used to substitute the conventional passivation layer composed of SiO2 in the method of the present invention, the heat dissipating capacity and the lifetime of the LED can be increased. Further, by roughening the surface of the passivation layer or using the diamond-like carbon layer with higher light transmission as a passivation layer in the method of the present invention, luminescence efficiency of the LED can be enhanced.

Problems solved by technology

Thus, the luminescence efficiency of the LED 100 can not be improved.
Furthermore, the heat dissipating capacity of the prior art material, such as SiO2 and SiNx, used in the passivation layer 170 is poor.
In addition, the substrate 110 composed of sapphire has bad heat dissipating capacity.
Therefore, not only the performance of the LED 100 is inefficient, but also the lifetime of the LED is shortened resulting from the poor heat dissipating capacity.
Therefore, how to improve the luminescence efficiency and at the same time extend the lifetime of LEDs becomes an imminent issue to be solved.

Method used

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  • Light emitting diode and method for improving luminescence efficiency thereof
  • Light emitting diode and method for improving luminescence efficiency thereof
  • Light emitting diode and method for improving luminescence efficiency thereof

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first embodiment

[0022]FIG. 2 is a schematic cross-sectional view showing an LED according to the present invention. As shown in FIG. 2, an LED 200 essentially comprises a semiconductor layer 220, a first electrode 240, a second electrode 260 and a diamond-like carbon layer 270. The semiconductor layer 220 includes a first type doped semiconductor layer 222, a light emitting layer 224 and a second type doped semiconductor layer 226. Wherein, the light emitting layer 224 locates between the first type doped semiconductor layer 222 and the second type doped semiconductor layer 226. The first electrode 240 is electrically connected to the first type doped semiconductor layer 222. The second electrode 260 is electrically connected to the second type doped semiconductor layer 226. A diamond-like carbon layer 270 covers on the semiconductor layer 220 and exposes at least portion of the first electrode 240.

[0023] Referring to FIG. 2, owing to the better light transmission of the diamond-like carbon layer 2...

second embodiment

[0029]FIG. 3 is a schematic cross-sectional view showing an LED according to the present invention. As shown in FIG. 3, the LED 300 essentially comprises a semiconductor layer 320, a first electrode 340, a second electrode 360 and a diamond-like carbon layer 370. Wherein, the layers of the LED 300 is similar to the layers of the LED 200 shown in FIG. 2, thus details are omitted here. Meanwhile, the surface of the second type doped semiconductor layer 326 might be roughened for enhancing the bonding strength between the second type doped semiconductor layer 326 and the diamond-like carbon layer 370.

[0030] Referring to FIG. 3, owing to the better light transmission of the diamond-like carbon layer 370, the luminescence efficiency of the LED 300 can be improved. In addition, the exposed outer surface of the diamond-like carbon layer 370 can be a rough surface, so that the total reflection of light around the surface of the diamond-like carbon layer 370 can be reduced and the luminescen...

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Abstract

A light emitting diode comprising a semiconductor layer, a first electrode, a second electrode and a diamond-like carbon layer is provided. The semiconductor layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. Wherein, the light emitting layer locates between the first type doped semiconductor layer and the second type doped semiconductor layer. The first electrode is electrically connected to the first type doped semiconductor layer. The second electrode is electrically connected to the second type doped semiconductor layer. The diamond-like carbon layer covers on the semiconductor layer and exposes at least a portion of the first electrode. Moreover, the exposed outer surface of the diamond-like carbon layer is a rough surface. Alternatively, other passivation layer with rough surface can be substituted for the diamond-like carbon layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] This application claims the priority benefit of Taiwan application serial no. 94121791, filed on Jun. 29, 2005. All disclosure of the Taiwan application is incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a light emitting device and a method for improving luminescence efficiency of a light emitting device. More particularly, the present invention relates to a light emitting diode (LED) and a method for improving luminescence efficiency thereof. [0004] 2. Description of Related Art [0005] Recently, since luminescence efficiency of LEDs has been constantly upgraded, application of fluorescent lamps and / or incandescent bulbs is gradually replaced with LEDs in some areas, such as scanning light source which requires high speed response, back or front light source of a liquid crystal display (LCD), car dashboard illumination, traffic signs and general illumi...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L33/00H01L21/00H01L33/44H01L33/64
CPCH01L33/44H01L2933/0091H01L33/641
Inventor CHEN, CHING-CHUNG
Owner INTELLECTUAL VENTURES FUND 82