Pattern forming method and wiring pattern forming method, and electro-optic device and electronic equipment

a technology of pattern forming and pattern forming, which is applied in the direction of diffusion transfer process, thermography, instruments, etc., can solve the problems of difficult patterning, high cost and large-scale device, and the above-mentioned related art, etc., to achieve low cost device structure, high precision, and efficient conversion into thermal energy
US20070010038A1Inactive Publication Date: 2007-01-11SEIKO EPSON CORP

Patent Information

Authority / Receiving Office
US ยท United States
Patent Type
Applications(United States)
Current Assignee / Owner
SEIKO EPSON CORP
Publication Date
2007-01-11
Estimated Expiration
Not applicable ยท inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

To provide a pattern forming method enabling a thin film to be patterned with high precision by easy and low cost techniques. A thin film 2 is provided on a base material 1 containing a sublimable dyestuff, light is irradiated to the base material 1, and heat generated by the light irradiation sublimates the sublimable dyestuff in a desired region, thereby removing the thin film 2 corresponding to an irradiation region where the light is irradiated to thereby pattern this thin film 2.
Need to check novelty before this filing date? Find Prior Art

Description

[0001] This is a Divisional of application Ser. No. 10 / 898,344 filed Jul. 26, 2004. The entire disclosure of the prior applications is hereby incorporated by reference herein in its entirety.BACKGROUND OF THE INVENTION

[0002] 1. Field of Invention

[0003] The present invention relates to a pattern forming method for forming a thin film pattern on a base material and a forming method of a wiring pattern using the thin film pattern, and an electro-optic device and electronic equipment.

[0004] 2. Description of Related Art

[0005] Conventionally, as a manufacturing method of a device having a fine wiring pattern such as a semiconductor integrated circuit, a photolithography method is often used, however a device manufacturing method using a droplet discharging method (ink jet method) has attracted attention. There is proposed a method in which in the case where the fine wiring pattern is formed using the droplet discharging method, in order to increase precision in a pattern line width, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More