Electronic structures utilizing etch resistant boron and phosphorus materials and methods to form same

Abstract

A dense boron-based or phosphorus-based dielectric material is provided. Specifically, the present invention provides a dense boron-based dielectric material comprised of boron and at least one of carbon, nitrogen, and hydrogen or a dense phosphorus-based dielectric comprised of phosphorus and nitrogen. The present invention also provides electronic structures containing the dense boron-based or phosphorus-based dielectric as an etch stop, a dielectric Cu capping material, a CMP stop layer, and / or a reactive ion etching mask in a ULSI back-end-of-the-line (BEOL) interconnect structure. A method of forming the inventive boron-based or phosphorus-based dielectric as well as the electronic structure containing the same are also described in the present invention.

Description

FIELD OF THE INVENTION[0001]The present invention describes dielectric materials comprised of boron or phosphorus in combination with other elements that have high thermal and chemical stability, and methods for fabricating films of these materials and electronic devices containing such films. More particularly, the present invention relates to a dense boron alloy or dense phosphorus alloy dielectric material for use as an etch stop, a cap material, and / or a hard mask / polish stop in an ultra large scale integrated (ULSI) back-end-of-the-line (BEOL) interconnect structure. Electronic structures containing these materials are provided, and methods for fabrication of such films and structures are also described.BACKGROUND OF THE INVENTION[0002]The continuous shrinking in dimensions of electronic devices utilized in ULSI circuits in recent years has resulted in increasing the resistance of the BEOL metallization as well as increasing the capacitance of the intralayer and interlayer diel...

AI Technical Summary

Benefits of technology

[0010]The present invention further provides alloy materials comprised of boron or phosphorus in combination with other elements, wherein the alloy materials have high thermal and chemical stability. That is, the alloy materials of the present application can withstand processing temperatures of about 400° C. or greater and do not undergo any chemical change during processing.

Problems solved by technology

This combined effect increases signal delays in ULSI electronic devices.

A significant problem encountered in forming these BEOL interconnect structures with smaller and smaller dimensions is the etch selectivity is poor between the ILD layer comprised of Si, C, O, and H and the underlying layer.

Another problem with prior art BEOL interconnect structures formed in a porous SiCOH dielectric is that a stop layer for chemical mechanical polishing (CMP) is used on top of the porous SiCOH dielectric, but in the prior art the CMP stop layer has a similar or identical composition to the porous SiCOH dielectric.

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