CMP-apparatus retainer ring and manufacturing method thereof, and CMP apparatus

a technology of retainer ring and retainer ring, which is applied in the direction of manufacturing tools, grinding machines, lapping machines, etc., can solve the problems of lowering the production availability of wafers, unable to obtain predetermined polishing performance, and requiring a great deal of time and labor, so as to achieve suitable polishing performance, reduce the time taken for a break-in polish, and achieve high flatness

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a technology of retainer ring and retainer ring, which is applied in the direction of manufacturing tools, grinding machines, lapping machines, etc., can solve the problems of lowering the production availability of wafers, unable to obtain predetermined polishing performance, and requiring a great deal of time and labor, so as to achieve suitable polishing performance, reduce the time taken for a break-in polish, and achieve high flatness

US20070298693A1Inactive Publication Date: 2007-12-27NIPPON SEIMITSU DENSHI

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[0042] Hereinafter, a CMP-apparatus retainer ring according to an embodiment of the present invention will be described with reference to the attached drawings.

[0043]FIG. 1 is a front view of a CMP apparatus 1 according to the embodiment of the present invention, showing a schematic configuration thereof. This CMP apparatus 1 has a configuration equivalent to a CMP apparatus which is widely used in general, apart from a retainer ring 8 (described later). Herein, a detailed description is omitted. It includes: a base 2 which can be rotated; a polish pad 3 (such as a cloth) which is disposed on this base 2; a holding head 4; a slurry supply nozzle 5 (a slurry supplying means); and a dresser 6 (a dressing means). It polishes a wafer W chemically and mechanically.

[0044] The holding head 4 holds the wafer W and presses its surface W1 to be polished against the polish pad 3. It is designed to move on the polish pad 3 while rotating. This holding head 4 is, as shown in FIG. 2, provided w...

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Abstract

A retainer ring is provided which is capable of, effectively in practice, restraining the time taken for a break-in polish to the minimum. This retainer ring 8: is disposed inside of a holding head 4 in a CMP apparatus 1 which polishes a wafer W chemically and mechanically; has a ring shape so as to surround the periphery of the wafer W; presses a polish surface 3a of a polish pad 3; is made of an engineering plastic material such as PPS; and has a pressure surface 8a for pressing the polish surface 3a of the polish pad 3 whose surface roughness is a center-line average roughness (Ra) of 0.01 μm or below.

Description

TECHNICAL FIELD [0001] The present invention relates to a CMP (or chemical mechanical polishing) apparatus which polishes a wafer chemically and mechanically. Particularly, it relates to a retainer ring which is provided on (attached to) the inside of a holding head of the CMP Apparatus and surrounds the periphery of the wafer. BACKGROUND ART [0002] As a semiconductor device has more highly integrated and has performed better, its measurements in the horizontal directions (on the plane) have shortened and the structure in the vertical directions has been fined down and multi-layered. In order to realize such a fine and multi-layered structure, a semiconductor substrate (such as a silicon substrate) needs to have a high flatness (evenness). Hence, the flatness has to be heightened at the stage of a wafer, and in response to this demand, a CMP Apparatus is used. [0003] This CMP Apparatus is configured by, for example: a rotary base; a polish pad disposed on this base; and a holding he...

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Application Information

Patent Timeline

27 Dec 2007

Publication

US20070298693A1

IPC: B24B29/00; B24B37/32

CPC: H01L21/30625; B24B37/32; B24B37/04; H01L21/304

Inventors: ICHINOSHIME, TSUTOMU