Plasma Processing Apparatus And Method

Abstract

A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation of application Ser. No. 10 / 378,628 filed on Mar. 5, 2003. The contents of application Ser. No. 10 / 378,628 are hereby incorporated herein by reference in their entirety. This application relates to U.S. Ser. No. 11 / 001,059, filed Dec. 2, 2004, which is a continuation of application Ser. No. 10 / 378,628, filed Mar. 5, 2003.BACKGROUND OF THE INVENTION [0002] The present invention relates to a plasma processing apparatus and a plasma processing method; and, more particularly, it relates to a plasma processing apparatus and a plasma processing method with which it is possible to suppress the occurrence of obstacles caused by reaction products. [0003] Materials to be etched, which are used in the field of semiconductor device production, can include volatile materials, such as Si, Al and SiO2, for example, for a DRAM (Dynamic Random Access Memory) or logic circuit IC. Further, non-volatile materials, such as ...

AI Technical Summary

Benefits of technology

This configuration significantly reduces the adhesion and peeling of deposits on the inner walls, maintaining etching stability and efficiency, and allows for reduced manual cleaning intervals, enhancing the overall operation efficiency and mass production stability.

Problems solved by technology

The non-volatile materials are difficult to etch since the melting point of the reaction products that are formed during etching is high.

Further, since the vapor pressure of the reaction products after etching is low and the deposition coefficient to the inner walls of the vacuum vessels (vacuum processing chamber) is high, the inner walls of the vacuum vessels tend to become covered with deposits of the reaction products, even after processing only a small amount of samples (several to several hundreds of sheets).

Further, when they have peeled and fallen, the deposits form obstacles.

In this process, a great amount of polymer films are deposited on the inner wall of a reactor, other than on the wafers, thereby to inhibit the mass production stability.

In any of the processing apparatuses described above, since countermeasures for the preventing formation of deposited matter on the inner wall of the vacuum vessel, in the case of etching a non-volatile material, are not completely effective, a manual cleaning operation, which involves opening the vacuum vessel to the atmosphere, needs to be conducted repeatedly.

Since manual cleaning requires as much as 6 to 12 hours from the start of the cleaning to the start of the processing for the next sample, this lowers the operation efficiency of the apparatus.

However, the apparatus is not effective for other portions that are formed of non-conductive materials or conductive materials.

As has been described above, when reaction products are deposited excessively on the inner wall of the vacuum vessel, deposited films tend to peel and fall from the surface of the inner wall and adhere as obstacles on the wafer.

Further, in the plasma processing apparatus in which it is intended to decrease the adhesion of reaction products on the inner wall of the vacuum vessel, or to enable cleaning of the inner wall of the vacuum vessel by providing a Faraday shield between the induction antennas disposed on the outer circumference of the vacuum vessel and the plasmas and connecting the RF power source to the Faraday shield to supply electric power thereto, the range of the desired effect is limited.

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