Chemical mechanical polishing process

Inactive Publication Date: 2008-03-20
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009]In an objective of the present invention, a CMP process is provided, capable of saving the processing time.
[0010]In another objective of the present invention, a CMP process is provided, capable of improving the throughput.
[0022]In the present invention, since the ex-situ condition process is performed immediately after the wafer is polished in completion, the manufacturing can be saved. Also and, when the present invention is applied to a CMP apparatus with several polishing regions. These polishing regions having different polishing time can be integrated, in order to the total manufacturing time and thereby increase throughput.

Problems solved by technology

However, during the in-situ conditioning process, since the slurry is usually acid, the diamond particles on the conditioner is easily dropped and scattered over the polishing pad.
This results in occurrence of the scratch or the micro-scratch on the wafer after polishing.
However, since the ex-situ conditioning process needs to wait to perform on the polishing pad, until all of the wafers in the CMP apparatus have been polished in completion and moved outside.
This therefore is time consuming.

Method used

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Examples

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embodiment 1

[0036]FIG. 3 is a drawing, schematically illustrating the polishing timing of the CMP process of the present invention in comparing with a convention CMP process, according to a first embodiment of the invention.

[0037]Referring to FIG. 3, when the CMP apparatus has three polishing regions, indicated by P1, P2 and P3 as the first polishing platen, the second polishing platen, and the third polishing platen in the polishing regions. Each polishing region has a polishing time period by 60 seconds. In addition, a transferring time for the wafer being moved to the next polishing region, equivalent to the rotation time of the mechanical arm, is set to 6 seconds. The polishing platens P1 and P2 have the ex-situ conditioning time by 20 seconds while the polishing platen P3 does not have the ex-situ conditioning.

[0038]As known from FIG. 3, when the polishing step at P1 finishes (at time point 0 of the time coordinate of FIG. 3), in the embodiment of the invention, the ex-situ conditioning st...

embodiment 2

[0039]FIG. 4 is a drawing, schematically illustrating the polishing timing of the CMP process of the present invention in comparing with a convention CMP process, according to a second embodiment of the invention.

[0040]The difference of embodiment 2 from embodiment 1 is that the polishing time for P1 and P2 is set to 60 second while the P3 is set to 70 seconds. When the polishing step for the first wafer at P1 has finished, at time point 0 of the time coordinate, the ex-situ conditioning step and the transferring step are performed at the same time. After the first wafer, being moved to P2, is polished by 14 second, at time point 20 of the time coordinate, P1 has finished the ex-situ conditioning step and performed the polishing step for the second wafer. In addition, when the first wafer being moved to P2 finishes the polishing step, at time point 80 of time coordinate. After waiting for 14 seconds, the first wafer and the second wafer can be simultaneously transferred to P3 for po...

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Abstract

A chemical mechanical polishing (CMP) process at least includes a polishing step and an ex-situ conditioning step, and the ex-situ conditioning step must be immediately performed after the polishing step. Therefore, it can save the process time. Furthermore, when applying to a CMP apparatus with several polishing regions, it can integrate these polishing regions having different polishing time in order to shorten total manufacturing time, thereby improving throughput.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of Invention[0002]The present invention relates to chemical mechanical polish (CMP) process. More particularly, the present invention relates to a CMP process, capable of improve the throughput.[0003]2. Description of Related Art[0004]As the device size is continuously reduced, the exposure-light resolution for the photolithography is required to be relatively high. As the depth of the exposure-light is reduced, it is required more strictly for the varying degree of altitude on the wafer surface. Thus, when the manufacturing process is down to the sub-micron, the planarization of the wafer is accomplished, based on CMP process. The unique property of anisotropic polishing CMP process not only can be used to planarize the profile of the wafer surface, but also can be used in fabricating the metallic vertical or horizontal interconnect in damascene damacene structure, the shallow trench isolation of device during the first manufacturing stage ...

Claims

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Application Information

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IPC IPC(8): B24B1/00
CPCB24B53/017B24B37/042
Inventor CHEN, CHIEN-HSUANJIANG, HO-DALI, CHIH-YUEHYANG, CHIH-CHINWU, CHENG-HSUN
Owner UNITED MICROELECTRONICS CORP
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