Method for setting high-pressure high-power thyristor electrothermic model

A building method and thyristor technology, applied in the direction of thyristor, electrical digital data processing, special data processing applications, etc., can solve the problems of device damage, a lot of time, high price, etc., to avoid danger, high precision, and improve work efficiency Effect

Active Publication Date: 2009-11-25
CHINA ELECTRIC POWER RES INST +1
View PDF0 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If you use experimental methods to study these characteristics, you must first master the correct measurement methods, and have complete test devices and measuring instruments, and the construction of these devices and the purchase of instruments are usually expensive; Device damage is also unavoidable; again, such tests usually require a lot of time and manpower to participate
All in all, it takes a lot of manpower, material resources and time costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for setting high-pressure high-power thyristor electrothermic model
  • Method for setting high-pressure high-power thyristor electrothermic model
  • Method for setting high-pressure high-power thyristor electrothermic model

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] The specific steps of the establishment method of the high-voltage high-power thyristor electrothermal model of the present invention are as follows:

[0047]First, use the finite element method to calculate the thermal impedance value, and establish the Foster network thermal impedance model of the thyristor through the method of curve fitting and identity transformation. Under the condition that the physical structure of the thyristor and the characteristics of its heat-conducting material are known, the basic law of heat transfer can be used to analyze its internal temperature field and thermal impedance model. According to the law of energy conservation and the basic law of heat transfer, in an isotropic homogeneous medium with a density of ρ, a specific heat capacity of c, and a thermal conductivity of k, when heat power is generated at a rate of q per unit volume, its The transient temperature distribution T(x, y, z, t) must satisfy the following temperature field...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for setting a high-pressure high-power thyristor electrothermic model and a simulating method. In the invention, first a thermal impedance model of a thyristor is calculated and set according to the finite element method, and a Foster network thermal impedance model is expressed by the identical transformation, subsequently a thyristor equivalent electric model is set by using the mathematical method. The loss Pave(t) is determined by the switch-on forward voltage drop Vtm and the working current IA, an electrothermic model of the thyristor is set by connecting the relation of the variants such as the switch-on forward voltage drop Vtm, the working current IA, the loss Pave(t), the junction temperature TJ and the like, then the simulation is conducted on a Pspice software. The model of the invention contains a thermodynamics and electrics model, which can provides the dynamic relationship between the heating parameters and the electric parameters, can be used for simulating the transient and steady junction temperature change and predicting whether the thyristor works in the safe area, also used for insulating the junction temperature change under the sine semi-wave surge current surge and predicting whether the thyristor fail.

Description

technical field [0001] The invention relates to the field of power system simulation, in particular to a method for establishing an electrothermal model of a high-voltage and high-power thyristor, which includes electrical and thermal models. The model can provide the dynamic relationship between thermal parameters and electrical parameters, predict the change of thyristor junction temperature, and provide theoretical guidance for the application of thyristors in high-voltage and high-power fields. Background technique [0002] UHV transmission technology is the commanding height of the world's power grid technology. With the completion and operation of the UHV AC test demonstration project, the development of UHV DC key equipment is becoming one of the hottest topics. The core components of the UHV DC transmission converter valve: The application research of high voltage and high power thyristor is becoming the focus of people's research. [0003] At the same time, high-vo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50H01L29/74
Inventor 文玲锋乔尔敏邓占锋赵波
Owner CHINA ELECTRIC POWER RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap