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Extrinsic gain laser and optical amplification device

a laser and optical amplifier technology, applied can solve the problem of no efficient electrically pumped laser demonstrated in the field of si lasers

Inactive Publication Date: 2009-01-15
MASSACHUSETTS INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention is about creating an optical amplifier on a silicon platform using a gain medium with extrinsic gain materials. This allows for the amplification of light signals through the use of electrical or optical pumps. The technical effect of this invention is the improved performance and reliability of optical amplifiers in a compact and cost-effective platform.

Problems solved by technology

Although research on this field has been continued for over two decades, no efficient electrically pumped laser has been demonstrated on Si yet.

Method used

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  • Extrinsic gain laser and optical amplification device
  • Extrinsic gain laser and optical amplification device
  • Extrinsic gain laser and optical amplification device

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Embodiment Construction

[0015]The invention provides a design for a laser or optical amplification device. The device utilizes a slot waveguide configuration which allows substantial confinement of the optical field within a low-index gain medium when suitable polarization is propagating in the waveguide. The same slot waveguide design allows electrical current to be transported through an insulating gain medium, because its thickness supports a tunneling conduction mechanism. This property allows electronic pumping of the structure which is favorable to integration of the device with electronic circuits. Optical pumping remains an option with the design, as well. The most attractive gain medium is Er-doped dielectric glass that delivers a broad gain spectrum centered around the telecommunications standard wavelength of 1550 nm. The target application for this device is on chip amplification of WDM signals and for a multi-wavelength source for an optical power supply to supply the WDM channel wavelengths.

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Abstract

An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.

Description

PRIORITY INFORMATION[0001]This application claims priority from provisional application Ser. No. 60 / 801,444 filed May 18, 2006, which is incorporated herein by reference in its entirety.BACKGROUND OF THE INVENTION[0002]The invention relates to the field of Si lasers, and in particular to a laser structure obtaining efficient light emission at around 1550 nm from the direct band gap of Ge.[0003]An efficient laser source on Si is the most crucial device to achieve optoelectronic integrated circuit (OEIC) on Si. Although research on this field has been continued for over two decades, no efficient electrically pumped laser has been demonstrated on Si yet. Therefore, it is of great significance to achieve an efficient, electrically pumped light source on Si platform. Further more, it would be ideal if the light source emits at a wavelength around 1550 mn so that the on-chip optical signals are compatible with silicon wavguides, germanium detectors and the broadband gain spectrum of Er-do...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01S3/14
CPCH01S3/0632H01S3/0637H01S3/083H01S3/09H01S3/1608H01S3/169H01S3/176H01S3/2308
Inventor KIMERLING, LIONEL C.ATWATER, HARRYBRONGERSMA, MARK L.DAL NEGRO, LUCAKOCH, THOMAS L.FAUCHET, PHILIPPELIPSON, MICHALMICHEL, JURGEN
Owner MASSACHUSETTS INST OF TECH