Nitride semiconductor light emitting device
a light-emitting device and nitride technology, applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problems of reducing quantum efficiency, more crucial limitation, and no method has been proposed to completely overcome this limitation, and achieves low cost and low cost. , the effect of minimizing the net polarization mismatch
Inactive Publication Date: 2009-02-26
RENESSELAER POLYTECHNIC INST +1
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Benefits of technology
[0008]An aspect of the present invention provides a nitride semiconductor light emitting device which can achieve high efficiency by minimizing a net polarization mismatch between a quantum barrier layer and an electron blocking layer.
Problems solved by technology
The electron leakage current decreases quantum efficiency, and is becoming a more crucial limitation because LEDs are increasingly being used at high currents as in lighting devices.
However, no methods have been proposed to completely overcome this limitation.
Method used
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[0024]Exemplary embodiments of the present invention will be described below in more detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be constructed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. In the figures, the dimensions and the shapes of elements are exaggerated for clarity of illustration. Like reference numerals refer to like elements throughout.
[0025]FIG. 2A is a cross-sectional view of a nitride semiconductor light emitting device according to an exemplary embodiment of the present invention. FIG. 2B is an enlarged view of an active layer region of FIG. 2A. Referring to FIGS. 2A and 2B, a nitride semiconductor light emitting device 200 according to the current embodiment includes an n-type nitride semiconductor...
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A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked, and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has greater bandgap energy than a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers, and has a net polarization equal to or smaller than that of the quantum barrier layer adjacent thereto. The nitride semiconductor light emitting device can achieve high efficiency in every current region by minimizing a net polarization mismatch between a quantum barrier layer and an electron blocking layer.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the priority of U.S. Provisional Application No. 60 / 956,723 filed on Aug. 20, 2007, the disclosure of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a nitride semiconductor light emitting device, and more particularly, to a nitride semiconductor light emitting device capable of minimizing a decrease in light emission efficiency at high currents.[0004]2. Description of the Related Art[0005]A light emitting diode (LED) is a semiconductor device that can emit light of various colors due to electron-hole recombination occurring at a p-n junction when a current is applied thereto. Compared to conventional lighting sources such as incandescent lighting bulbs and fluorescent lamps, LED has many advantages such as a long lifespan, low power, excellent initial-operation characteristics, and high tolerance to repetitive power on / off. ...
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Login to View More IPC IPC(8): H01L33/00H01L33/02H01L33/04H01L33/32
CPCH01L33/02H01L33/32H01L33/04
Inventor KIM, MIN-HOSCHUBERT, MARTIN F.KIM, JONG KYUSCHUBERT, E. FREDPARK, YONGJOSONE, CHEOLSOOYOON, SUKHO
Owner RENESSELAER POLYTECHNIC INST