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Method to form a photovoltaic cell comprising a thin lamina

a photovoltaic cell and lamina technology, applied in the direction of sustainable manufacturing/processing, climate sustainability, semiconductor devices, etc., can solve the problems of large amount of silicon waste in cutting loss, kerf, and large portion of the cost of conventional solar cells in silicon feedstock

Inactive Publication Date: 2009-08-06
GTAT CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0019]Another embodiment of the invention provides for a method for forming a photovoltaic cell, the method comprising: depositing a first layer of a first material on a first surface of a silicon wafer; implanting one or more species of gas ions through the first surface to define a cleave pla

Problems solved by technology

Current technology does not allow wafers of less than about 170 microns thick to be fabricated into cells economically, and at this thickness a substantial amount of silicon is wasted in cutting loss, or kerf.
A large portion of the cost of conventional solar cells is the cost of silicon feedstock.

Method used

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  • Method to form a photovoltaic cell comprising a thin lamina
  • Method to form a photovoltaic cell comprising a thin lamina
  • Method to form a photovoltaic cell comprising a thin lamina

Examples

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Multijunction Cells

[0124]In alternative embodiments, a lamina formed according to the present invention may serve as a portion of a tandem or multifunction cell. As shown in FIG. 12, the substrate 60 to which lamina 40 is affixed may already include a photovoltaic cell or portion of a cell 90; incident light will fall first on lamina 40, then pass through it to cell 90. Alternatively, as shown in FIG. 13, another cell or portion of a cell 92 may be formed above lamina 40, such that incident light travels first through cell 92, then through lamina 40. In other embodiments, there may be one or more cells or semiconductor layers above and / or below lamina 40. The other cells can be formed of the same semiconductor material as lamina 40 or of a different semiconductor material; examples include germanium, silicon germanium, GaAs, CdTe, InN, etc. Lamina 40 can include at least a portion of the base, or of the emitter, of a photovoltaic cell, or both.

[0125]Lamina 40 and additional cells or...

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Abstract

A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.

Description

RELATED APPLICATION[0001]This is a continuation of U.S. patent application Ser. No. 12 / 026,530, filed Feb. 5, 2008, which is incorporated herewith in its entirety.BACKGROUND OF THE INVENTION[0002]The invention relates to a method to form a thin semiconductor lamina for use in a photovoltaic cell.[0003]Conventional photovoltaic cells are most commonly formed from silicon wafers. Typically such wafers are sliced from an ingot of silicon. Current technology does not allow wafers of less than about 170 microns thick to be fabricated into cells economically, and at this thickness a substantial amount of silicon is wasted in cutting loss, or kerf. Silicon solar cells need not be this thick to be effective or commercially useful. A large portion of the cost of conventional solar cells is the cost of silicon feedstock.[0004]There is a need, therefore, for a method to form a thinner crystalline semiconductor photovoltaic cell cheaply and reliably.SUMMARY OF THE PREFERRED EMBODIMENTS[0005]The...

Claims

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Application Information

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IPC IPC(8): H01L31/00
CPCH01L31/022425Y02E10/547H01L31/03685H01L31/03762H01L31/061H01L31/0745H01L31/1804H01L31/1808H01L31/1816H01L31/1836H01L31/1852H01L31/1896Y02E10/544Y02E10/548Y02E10/545Y02E10/546H01L31/03682H01L31/0747H01L31/1892H01L31/0682Y02P70/50
Inventor SIVARAM, SRINIVASANAGARWAL, ADITYAHERNER, S. BRADPETTI, CHRISTOPHER J.
Owner GTAT CORPORATION