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Forming Sensing Elements above a Semiconductor Substrate

a technology of sensing elements and semiconductor substrates, applied in the field of sensing elements, can solve the problems of process difficulty, possible performance degradation, signal strength degradation of photo diodes, etc., and achieve the effects of reducing cross-talk, improving the signal strength of sensed signals, and reducing manufacturing costs

Active Publication Date: 2009-10-22
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009]The advantageous features of the present invention include improved signal strengths of sensed signals, reduced cross-talk, and reduced manufacturing cost.

Problems solved by technology

This causes the degradation in the signal strength received by photo diodes 4.
However, reducing the thicknesses of ILD and IMDs causes process difficulty and possible performance degradation for the ASIC, and may require customized formation processes.

Method used

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  • Forming Sensing Elements above a Semiconductor Substrate
  • Forming Sensing Elements above a Semiconductor Substrate
  • Forming Sensing Elements above a Semiconductor Substrate

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Embodiment Construction

[0015]The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

[0016]A novel method for forming sensing elements is provided. The intermediate stages of manufacturing a preferred embodiment of the present invention are illustrated. The variations of the preferred embodiments are then discussed. Throughout the various views and illustrative embodiments of the present invention, like reference numbers are used to designate like elements.

[0017]Referring to FIG. 2, substrate 20 is provided. Substrate 20 is preferably a semiconductor substrate formed of commonly used semiconductor materials such as silicon, silicon germanium, and the like. Ac...

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Abstract

An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.

Description

TECHNICAL FIELD[0001]This invention relates generally to sensing elements, and more particularly to integrating the sensing elements with integrated circuits.BACKGROUND[0002]Sensors are typically used for detecting environment parameters, such as light intensity, sound, pressure, and the like. Sensors are also widely used in imaging applications, such as infrared imaging for night vision. Existing sensors are often integrated with integrated circuits, for example, application specific integrated circuits (ASIC), which may in-situ process the sensed signals. For imaging applications, a great amount of processing may be involved. Integrating the sensors with the ASIC is thus advantageous for improving the performance.[0003]Conventionally, image sensors that respond to photons were formed at the surface of (or even “in”) semiconductor substrates. FIG. 1 illustrates a cross-sectional view of photo diodes 4 built in semiconductor substrate 2. Photo diodes 4 may be formed as an array. To ...

Claims

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Application Information

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IPC IPC(8): B32B3/30
CPCY10T428/12375H01L27/14687Y10T428/12396H01L27/14632
Inventor LIU, KE CHUNHUANG, KUAN-CHIEHLIN, CHIN-MINFU, KEN WEN-CHIENLIN, MINGO
Owner TAIWAN SEMICON MFG CO LTD