High-voltage metal-oxide-semiconductor device
a high-voltage metal-oxidesemiconductor and device technology, applied in the direction of semiconductor devices, basic electric elements, electrical equipment, etc., can solve the problem that the above-described high-voltage nmos device b>101/b> cannot be operated, and achieve the effect of improving the structure of the hvmos devi
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[0021]The present invention has been particularly shown and described with respect to certain embodiments and specific features thereof. The embodiments set forth hereinbelow are to be taken as illustrative rather than limiting. It should be readily apparent to those of ordinary skill in the art that various changes and modifications in form and detail may be made without departing from the spirit and scope of the invention.
[0022]The exemplary structures of HVMOS transistor according to the present invention are described in detail. The improved HVMOS transistor structure is described for a high-voltage NMOS transistor, but it should be understood by those skilled in the art that by reversing the polarity of the conductive dopants high-voltage PMOS transistors can be made.
[0023]FIG. 2 is an exemplary layout of the improved high-voltage NMOS transistor structure in accordance with one embodiment of this invention. FIG. 3 is a schematic, cross-sectional view taken alone line I-I′ of F...
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