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Electrostatic chuck device

a technology of electrostatic chuck and chuck body, which is applied in the direction of electrostatic holding device, basic electric elements, electric devices, etc., can solve the problems of damage to the elements on the substrate, damage to the substrate, and transportation error of the substrate w, so as to improve the efficiency and productivity.

Inactive Publication Date: 2011-01-20
FUJII YOSHINORI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

Enables rapid and safe discharging of substrates, reducing the risk of transportation errors and damage, improving throughput and productivity while minimizing equipment maintenance.

Problems solved by technology

In this case, there is a fear that the substrate W will be damaged by the upthrust of the lifter pins or that a transportation error of the substrate W will occur.
Furthermore, there is the possibility that the elements on the substrate are damaged.
Although diselectrification by applying a reverse voltage can accelerate the diselectrification of the dielectric layer (insulating layer 3), there is a problem that the potential of the substrate cannot be immediately dissipated.
Diselectrification by using a plasma has many problems.
That is to say, this method can not be applied to the process that cannot use a plasma.
Because the electrode (ground) for diselectrification always faces a process chamber, film formation material is deposited on to the electrode, and the electrode is deteriorated by sputtering.
As a result, frequent reproduction maintenance of the electrode becomes necessary.
Even more particularly, in the diselectrification by heating up of the insulating layer 3, there is the fear that element deterioration is caused depending on the kinds of substrate W because the substrate temperature also rises with rise in operation temperature of the insulating layer 3.
Also, it takes considerable time to raise the temperature of the insulating layer 3.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0056]FIG. 1 is a schematic view showing a configuration of an electrostatic chuck device 11 according to a first embodiment of the present invention. The electrostatic chuck device 11 of this embodiment comprises mainly, a susceptor 12 which supports a semiconductor substrate W; an insulating layer (dielectric layer) 13 formed on the surface of the susceptor 12; plural chuck electrodes 14A and 14B which are arranged in the inside of the susceptor 12 and which are facing the semiconductor substrate W through insulating layer 13; and diselectrifying electrode 16 which is faced to the surface of the susceptor 12 and which can contact with the back surface of the semiconductor substrate W.

[0057]The susceptor 12 is made of ceramic or other insulating material and is installed in a process chamber of a vacuum chamber which is not illustrated. The insulating layer 13 is made of PBN (pyrolytic boron nitride), AlN (aluminum nitride) in this embodiment, but of course it can be made of insula...

second embodiment

[0075]FIG. 5 is a schematic view of an electrostatic chuck device 21 according to a second embodiment of the present invention. Parts that correspond to those in the above first embodiment, are denoted by the same reference numerals, the detailed description of which will be omitted.

[0076]In this embodiment, the electrostatic chuck device 21 has the diselectrifying electrodes 16 facing the surface of the susceptor 12. The diselectrifying electrodes 16 are arranged not only on the periphery of the susceptor 12 but also at interior portions of the surface of the susceptor 12. The diselectrifying electrodes 16 arranged at the interior portions of the surface of the susceptor 12 intervene between plural chuck electrodes 14A and 14B placed inside of the susceptor 12. The tips of the diselectrifying electrodes 16 are exposed in a point shape or linear shape toward the surface of the insulating layer 13 between the electrodes 14A and 14B as shown in FIG. 3 and FIG. 4.

[0077]Therefore, when ...

third embodiment

[0078]FIG. 6 is a schematic view of an electrostatic chuck device 31 according to a third embodiment of the present invention. Parts that correspond to those in the above first embodiment, are denoted by the same reference numerals, the detailed description of which will be omitted.

[0079]In this embodiment, the electrostatic chuck device 31 has a switch 38 arranged between the diselectrifying resistance 27 and the ground potential 19, whereby a diselectrifying circuit for the semiconductor substrate W is comprised. This switch 38 corresponds to “the switching means” of the present invention. The switch 38 may be constituted by a mechanical switch member or an electronic circuit such as a transistor.

[0080]According to this embodiment, because the switch 38 which electrically connects / cuts-off between the diselectrifying electrode 16 and the diselectrifying potential (ground potential) 19 is included, leakage of the substrate potential can be prevented by switch-off of the switch 38 d...

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PUM

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Abstract

The object of this invention is to provide an electrostatic chuck device which can properly and promptly diselectrify a substrate to be processed. In an electrostatic chuck device attracting a substrate to be processed on the surface of a susceptor electrically, a diselectrifying circuit is provided which includes diselectrifying electrode means facing the surface of the susceptor, a diselectrifying potential, and a diselectrifying resistance connected between the diselectrifying electrode means and the diselectrifying potential. The resistance value of the diselectrifying resistance is established such that it is lower than that of an insulating layer of the surface of the susceptor and the diselectrifying resistance can hold the potential of the substrate during an electrostatic chuck operation, such that the diselectrifying resistance can dissipate the potential of the substrate into the ground potential when the electrostatic chuck is canceled. This structure can thus appropriately and promptly diselectrify the substrate.

Description

CROSS REFERENCE[0001]This application is a continuation of U.S. application Ser. No. 11 / 666,950, filed May 3, 2007.TECHNICAL FIELD[0002]The present invention relates to an electrostatic chuck device which is used for a semiconductor manufacturing process, for example.BACKGROUND OF THE TECHNIQUE[0003]Conventionally, when a substrate to be processed such as, for example, a semiconductor wafer which is processed in a vacuum, an electrostatic chuck device is used to fix the substrate in a vacuum chamber. This kind of electrostatic chuck device has an insulating layer (a dielectric layer) on a susceptor for supporting the substrate. Static electricity occurs by applying voltage between the susceptor and the substrate through the insulating layer, thereby the substrate is attracted by the susceptor.[0004]There are mainly a monopole type and a bipolar type electrostatic chuck mechanism. FIG. 10 shows diagrammatically a configuration of a prior art electrostatic chuck device 1 having the el...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/683
CPCH02N13/00H01L21/6833H01L21/687
Inventor FUJII, YOSHINORI
Owner FUJII YOSHINORI