Dipping solution for use in production of siliceous film and process for producing siliceous film using the dipping solution

Abstract

This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.

Description

TECHNICAL FIELD[0001]This invention relates to a dipping solution used in a process for producing a siliceous film provided in an electronic device, and also relates to the process using the solution for producing a siliceous film. Specifically, the present invention relates to a dipping solution used for forming a shallow trench isolation structure or an insulating film from a polysilazane compound. The shallow trench isolation structure or the insulating film is provided for isolation of electronic parts in manufacture of an electronic device such as a semiconductor element. The present invention also relates to a process for producing the shallow trench isolation structure or the insulating film.BACKGROUND ART[0002]In an electronic device such as a semiconductor element, semiconductor parts such as transistors, resistors and the like are arranged on a substrate. Those parts must be electrically isolated from each other, and hence among them it is necessary to form an area separat...

AI Technical Summary

Benefits of technology

[0014]The present invention enables to form a covering film homogeneously in trenches even if the trenches have very high aspect ratios or very narrow widths. According to the present invention, coating type insulating films formed from polysilazane can be still effectively employed even in forming such high aspect ratio trenches as are necessary for the next generation devices. Further, the present invention is free from demerits of a dipping solution because foam deposition is avoided in the dipping solution of the present invention.

Problems solved by technology

According as the density and the integration degree are becoming higher, it is getting more difficult to form an isolation structure having fineness corresponding to the required integration degree.

However, if the trenches having fineness required in these days, for example, the trenches of 100 nm width or less are filled in according to those methods, some voids are often contained in the filled trenches.

These structural defects are liable to deteriorate the physical strength of the substrate and / or to impair the isolation characteristics.

However, in this method, when the silicon hydroxide is converted into silicon dioxide, the volume shrinkage often caused to form cracks.

This problem is remarkable when the film is subjected to a low temperature treatment, which is often required by restrictions on the device design and / or on the process design.

Images