Dipping solution for use in production of siliceous film and process for producing siliceous film using the dipping solution

a technology of dipping solution and siliceous film, which is applied in the direction of liquid/solution decomposition chemical coating, liquid organic insulator, coating, etc., can solve the problem of deteriorating the physical strength of the substrate, affecting the isolation characteristics, and affecting the formation of an isolation structure with fineness corresponding to the required integration degr

Inactive Publication Date: 2011-01-20
AZ ELECTRONICS MATERIALS USA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0014]The present invention enables to form a covering film homogeneously in trenches even if the trenches have very high aspect ratios or very narrow widths. According to the present invention, coating type insulating films formed from polysilazane can be still effe...

Problems solved by technology

According as the density and the integration degree are becoming higher, it is getting more difficult to form an isolation structure having fineness corresponding to the required integration degree.
However, if the trenches having fineness required in these days, for example, the trenches of 100 nm width or less are filled in according to those methods, some voids are often contained in the filled trenches.
These structural ...

Method used

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  • Dipping solution for use in production of siliceous film and process for producing siliceous film using the dipping solution
  • Dipping solution for use in production of siliceous film and process for producing siliceous film using the dipping solution

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examples

[0062]The below further explains the present invention by use of examples.

[0063]First, a perhydropolysilazane was dissolved in dibutyl ether in an amount of 20%, to prepare a polysilazane composition.

[0064]The polysilazane composition was then spin-coated at 1000 rpm for 20 seconds on a TEG substrate whose surface was beforehand covered with a silicon nitride liner layer. The obtained coating layer had a thickness of approx. 0.6 μm. The TEG substrate was provided with a line-and-space pattern of, in order, 0.05 μm, 0.1 μm, 0.2 μm, 0.5 μm and 1.0 μm.

[0065]Subsequently, the coated substrate was pre-baked on a hot-plate at 150° C. for 3 minutes.

[0066]The pre-baked polysilazane layer was dipped for 30 minutes in a dipping solution containing 35% hydrogen peroxide and 10% ethanol, and then post-baked on the hot-plate at 150° C. for 3 minutes. The obtained layer was observed by FT-IR, to find an absorption peak assigned to Si—O bond at 1080 cm−1.

[0067]After post-baked, the substrate was p...

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Abstract

This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.

Description

TECHNICAL FIELD[0001]This invention relates to a dipping solution used in a process for producing a siliceous film provided in an electronic device, and also relates to the process using the solution for producing a siliceous film. Specifically, the present invention relates to a dipping solution used for forming a shallow trench isolation structure or an insulating film from a polysilazane compound. The shallow trench isolation structure or the insulating film is provided for isolation of electronic parts in manufacture of an electronic device such as a semiconductor element. The present invention also relates to a process for producing the shallow trench isolation structure or the insulating film.BACKGROUND ART[0002]In an electronic device such as a semiconductor element, semiconductor parts such as transistors, resistors and the like are arranged on a substrate. Those parts must be electrically isolated from each other, and hence among them it is necessary to form an area separat...

Claims

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Application Information

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IPC IPC(8): H01L21/31H01B3/20
CPCC03C1/008C03C2203/20C08G77/62H01L21/02282C23C18/1212C23C18/122C09D183/16
Inventor HAYASHI, MASANOBU
Owner AZ ELECTRONICS MATERIALS USA CORP
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