Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Light Emitting Device, Light Emitting Device Package

Inactive Publication Date: 2011-08-04
LG INNOTEK CO LTD
View PDF17 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008]Exemplary embodiments provide a light emitting device in which efficiency and reliability of a white LED can be improved, a light emitting device package, and a lighting system.

Problems solved by technology

Thus, the generated light may reenter into the chip to lose a portion of the light due to absorption loss within the chip.
Accordingly, the light emitting efficiency may be reduced, and the reliability within the chip may be degraded.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light Emitting Device, Light Emitting Device Package
  • Light Emitting Device, Light Emitting Device Package
  • Light Emitting Device, Light Emitting Device Package

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0028]A light emitting device 100 may include a light emitting structure 120 including a first conductive type semiconductor layer 122, an active layer 124, and a second conductive type semiconductor layer 126 and a light extraction pattern P in which a period (a) exceeds λ / n (where, λ is a wavelength of light emitted from the active layer 124, and n is a refractive index of the light emitting structure 120) on the light emitting structure 120.

[0029]Although the light extraction pattern P is disposed within the light emitting structure 120 in the current embodiment, the present disclosure is not limited thereto. For example, an undoped semiconductor layer 110 may be disposed on the light emitting structure 120, and the light extraction pattern P may be disposed on the undoped semiconductor layer 110. Alternatively, the light extraction pattern P may be disposed on the first conductive type semiconductor layer 122.

[0030]In the current embodiment, the light extraction pattern P may h...

second embodiment

[0082]Also, as shown in FIG. 6, the second embodiment may include a wavelength filter 140 on the light emitting structure 120.

[0083]Also, in the second embodiment, an undoped semiconductor layer 110 may be selectively disposed between the light emitting structure 120 and the wavelength filter 140.

[0084]In case where the second light extraction pattern P2 is disposed on a chip, i.e., in a vertically type LED, the second light extraction pattern P2 may be inserted into an ohmic layer 132 or a reflective layer in a metal pattern or dielectric pattern shape, but is not limited thereto.

[0085]In case where a light extraction pattern is provided on a top end of the chip to improve light extraction efficiency of an LED chip, when light escaping already from a light extraction structure reaches a surface of the top end of the chip again, the light extraction structure may perform a role such as anti-reflection coating to assist the entry of the light into the chip.

[0086]Thus, when the light ...

third embodiment

[0096]The light emitting device 103 may include a light emitting structure 120 including a first conductive type semiconductor layer 212, an active layer 214, and a second conductive type semiconductor layer 216, a first dielectric layer 151 on a portion of a top surface of the light emitting structure 120, and a pad electrode 162 on the first dielectric layer 151.

[0097]In the current embodiment, a dielectric layer 150 may include the first dielectric layer 151 and a second dielectric layer 152 on a side surface of the light emitting structure. The first dielectric layer 151 and the second dielectric layer 152 may be connected to each other.

[0098]The current embodiment may include a first electrode 161 on the light emitting structure 120. The pad electrode 162 may be electrically connected to the first electrode 161.

[0099]A light extraction pattern P in which a period (a) exceeds λ / n (where, λ is a wavelength of light emitted from the active layer 214, and n is a refractive index o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and a light extraction pattern in which a period (a) exceeds λ / n (where, λ is a wavelength of light emitted from the active layer, and n is a refractive index of the light emitting structure) on the light emitting structure. The period (a) may be in the range of 5×(λ / n) (a (15×(λ / n). An etching depth (h) of the light extraction pattern may be equal to or greater than λ / n.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims under 35 U.S.C. §119 to Korean Patent Application No. 10-2010-0009210 Filed Feb. 1, 2010, which is hereby incorporated by reference for all purposes as if fully set forth herein.BACKGROUND OF THE INVENTION[0002]Embodiments relate to a light emitting device, a light emitting device package, and a lighting system.[0003]In light emitting devices, P-N junction diodes having the properties of converting electrical energy into light energy may be formed by combining group III and V elements on the periodic table. Light emitting devices may realize various colors by controlling the composition ratio of compound semiconductors.[0004]A white LED may be realized by mixing R, G, B independent light sources with each other or converting a phosphor through a pump beam of blue or ultraviolet light. Here, the conversion of the phosphor has advantages in aspects of manufacturing cost, color temperature control, and light emitting ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/06
CPCH01L33/20H01L33/387H01L2933/0083H01L33/58H01L33/50H01L33/42H01L33/46H01L33/22H01L2224/48091H01L2924/00014H01L2924/12032H01L2924/00
Inventor KIM, SUN KYUNG
Owner LG INNOTEK CO LTD
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com