Light Emitting Device, Light Emitting Device Package

Inactive Publication Date: 2011-08-04
LG INNOTEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008]Exemplary embodiments provide a light emitting device in which efficiency and reliabi

Problems solved by technology

Thus, the generated light may reenter into the chip to lose a portion of the light due to absorption loss within the

Method used

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  • Light Emitting Device, Light Emitting Device Package
  • Light Emitting Device, Light Emitting Device Package
  • Light Emitting Device, Light Emitting Device Package

Examples

Experimental program
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Example

[0028]A light emitting device 100 according to a first embodiment may include a light emitting structure 120 including a first conductive type semiconductor layer 122, an active layer 124, and a second conductive type semiconductor layer 126 and a light extraction pattern P in which a period (a) exceeds λ / n (where, λ is a wavelength of light emitted from the active layer 124, and n is a refractive index of the light emitting structure 120) on the light emitting structure 120.

[0029]Although the light extraction pattern P is disposed within the light emitting structure 120 in the current embodiment, the present disclosure is not limited thereto. For example, an undoped semiconductor layer 110 may be disposed on the light emitting structure 120, and the light extraction pattern P may be disposed on the undoped semiconductor layer 110. Alternatively, the light extraction pattern P may be disposed on the first conductive type semiconductor layer 122.

[0030]In the current embodiment, the l...

Example

[0080]A second embodiment may adopt the technical features of the first embodiment.

[0081]As shown in FIG. 6, a second electrode layer 130 may be disposed under a light emitting structure 120. A second light extraction pattern P2 may be disposed in the second electrode layer 130. The second light extraction pattern P2 may be a light extraction pattern (where, λ is a wavelength of light emitted from an active layer, and n is a refractive index of a light emitting structure) in which a period (a) exceeds λ / n within the second electrode layer 130. The second light extraction pattern P2 may be disposed within the second electrode layer 130 and contact the light emitting structure 120. Also, the second light extraction pattern P2 may not be exposed to the outside of the second electrode layer 130.

[0082]Also, as shown in FIG. 6, the second embodiment may include a wavelength filter 140 on the light emitting structure 120.

[0083]Also, in the second embodiment, an undoped semiconductor layer ...

Example

[0095]A third embodiment may adopt the technical features of the second embodiment.

[0096]The light emitting device 103 according to the third embodiment may include a light emitting structure 120 including a first conductive type semiconductor layer 212, an active layer 214, and a second conductive type semiconductor layer 216, a first dielectric layer 151 on a portion of a top surface of the light emitting structure 120, and a pad electrode 162 on the first dielectric layer 151.

[0097]In the current embodiment, a dielectric layer 150 may include the first dielectric layer 151 and a second dielectric layer 152 on a side surface of the light emitting structure. The first dielectric layer 151 and the second dielectric layer 152 may be connected to each other.

[0098]The current embodiment may include a first electrode 161 on the light emitting structure 120. The pad electrode 162 may be electrically connected to the first electrode 161.

[0099]A light extraction pattern P in which a period...

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PUM

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Abstract

Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and a light extraction pattern in which a period (a) exceeds λ/n (where, λ is a wavelength of light emitted from the active layer, and n is a refractive index of the light emitting structure) on the light emitting structure. The period (a) may be in the range of 5×(λ/n) (a (15×(λ/n). An etching depth (h) of the light extraction pattern may be equal to or greater than λ/n.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims under 35 U.S.C. §119 to Korean Patent Application No. 10-2010-0009210 Filed Feb. 1, 2010, which is hereby incorporated by reference for all purposes as if fully set forth herein.BACKGROUND OF THE INVENTION[0002]Embodiments relate to a light emitting device, a light emitting device package, and a lighting system.[0003]In light emitting devices, P-N junction diodes having the properties of converting electrical energy into light energy may be formed by combining group III and V elements on the periodic table. Light emitting devices may realize various colors by controlling the composition ratio of compound semiconductors.[0004]A white LED may be realized by mixing R, G, B independent light sources with each other or converting a phosphor through a pump beam of blue or ultraviolet light. Here, the conversion of the phosphor has advantages in aspects of manufacturing cost, color temperature control, and light emitting ...

Claims

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Application Information

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IPC IPC(8): H01L33/06
CPCH01L33/20H01L33/387H01L2933/0083H01L33/58H01L33/50H01L33/42H01L33/46H01L33/22H01L2224/48091H01L2924/00014H01L2924/12032H01L2924/00
Inventor KIM, SUN KYUNG
Owner LG INNOTEK CO LTD
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