Optical thin-film vapor deposition apparatus and optical thin-film production method
a technology of optical thin films and vapor deposition apparatus, which is applied in vacuum evaporation coatings, plasma techniques, coatings, etc., can solve the problems of increasing the distance between the ion source and each of the substrates, difficult in conventional techniques, and inability to keep the film-quality of the optical thin-film to be resultingly obtained, so as to achieve homogenization of the thin-film structure, effective improvement of film-quality, and increase the energy to be provided to the vapor d
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example 2
[0116]Next, the result of conducting film formation by using the optical thin-film vapor deposition apparatus 1 shown in FIG. 1 will be explained with reference to FIG. 3. FIG. 3 is a graph of another relationship between mounting angle (ion-beam incidence angle) θ and a sum of a transmission and a reflectance of an optical thin-film, and shows a sum of transmission T+reflectance R at a wavelength λ=550 nm. The measured mounting angles θ were within a range of 0 to 85°. The mounting angle θ was varied by adjusting the mounting position of the ion source 38, and the attachment 44 itself.
[0117]Whereas Example 1 was conducted by setting the energy density of the ion beam at 50 mW / cm2 as noted above, film formation was conducted in Example 2 by setting the energy density of ion beam as follows and the mounting angle θ at 0 to 85°. The mounting angle θ was varied by adjusting the mounting position of the ion source 38, and the attachment 44 itself. Further, whereas the film of Example 1 ...
example 3
COMPARATIVE EXAMPLE 1
[0136]Example 1 (mounting angle θ=40°), where the film formation was conducted by using the optical thin-film vapor deposition apparatus 1 shown in FIG. 1, will be explained by comparing it with Comparative Example 1 (mounting angle θ=0°), where film formation was conducted by using the conventional optical thin-film vapor deposition apparatus (see FIG. 7). It is noted that the mounting angle θ=0° corresponds to a situation where the ion source 38 is positionally coincident with a center of curvature of the substrate holder 12. In each of Example 1 and Comparative Example 1, the high refractive index substance and low refractive index substance as the vapor deposition substances were alternately film-formed. It is noted that, formed in each of Example 1 and Comparative Example 1, was a multi-layer film for a short wavelength pass filter (SWPF), comprising 36 layers adopting Ta2O5 as the high refractive index substance and SiO2 as the low refractive index substa...
examples 4 and 5
[0183]FIG. 6 is a graph showing a sum of a transmission T and a reflectance R of each of the optical thin-films of Examples 4 and 5, and the graph was obtained by irradiating light having a wavelength λ over a range of 400 to 1,000 nm to each fabricated multi-layer film and by plotting a sum value (transmission T+reflectance R) of the transmission T and reflectance R at the wavelength λ in relation thereto. In each of Examples 4 and 5, the high refractive index substance and low refractive index substance as the vapor deposition substances were alternately film-formed. It is noted that, formed in Examples 4 and 5, was a multi-layer film for a short wavelength pass filter (SWPF), comprising 36 layers adopting Ta2O5 as the high refractive index substance and SiO2 as the low refractive index substance. Further, measurement results concerning optical characteristics of the fabricated SWPF multi-layer films are shown in FIG. 6.
[0184]The film-forming condition of Examples 4 and 5 was as f...
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Abstract
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