Electrical element package

Inactive Publication Date: 2013-08-22
NIPPON ELECTRIC GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0036]As described above, according to the present invention, it is possible to reduce a situation in which the electrode or the electrical element is damaged by the irrad

Problems solved by technology

When the laser light is applied to the glass frit, however, an electrode (for example, an ITO electrode) for supplying electric power from the exterior to the OLED layer and the OLED layer may be damaged by irradiation heat of the laser light.
Therefore, if no countermeasure against the irradiation heat of the laser light is taken, the electrode located below the glass frit is unduly heated by the irradiation hea

Method used

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Examples

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example 1

[0131]First, the first aspect of the present invention is described in detail based on examples. It should be noted that the first aspect of the present invention is not limited to the following examples. The following examples are mere exemplifications.

[0132](Simulation of Frequency Characteristic of Reflectance)

[0133]Design values of film configurations of examples (No. 2 to No. 4) of the multilayer dielectric film used for the electrical element package according to the first aspect of the present invention are shown in Table 1. It should be noted that, in Table 1, a single-layer dielectric film is shown as a comparative example (No. 1).

TABLE 1No. 1No. 2No. 3No. 4No. 5First layerSi3N4Si3N4Si3N4Si3N4Si3N4(Thickness (nm))(100.6)(100.6)(100.6)(100.6)(100.6)Second layer—SiO2SiO2SiO2SiO2(Thickness (nm))(139.0)(139.0)(139.0)(139.0)Third layer—Si3N4Si3N4Si3N4Si3N4(Thickness (nm))(100.6)(100.6)(100.6)(100.6)Fourth layer——SiO2SiO2SiO2(Thickness (nm))(139.0)(139.0)(139.0)Fifth layer——Si3N4...

example 2

[0135](Measured Values of Frequency Characteristic of Reflectance)

[0136]Examples of film configurations of examples (No. 6 to No. 8) of the multilayer dielectric film used for the electrical element package according to the first aspect of the present invention are shown in Table 2.

TABLE 2No. 6No. 7No. 8First layerSi3N4Si3N4Si3N4(Thickness (nm))(100.6)(100.6)(100.6)Second layerSiO2SiO2SiO2(Thickness (nm))(139.0)(139.0)(139.0)Third layer—Si3N4Si3N4(Thickness (nm))(100.6)(100.6)Fourth layer—SiO2SiO2(Thickness (nm))(139.0)(139.0)Fifth layer—Si3N4Si3N4(Thickness (nm))(100.6)(100.6)Sixth layer—SiO2SiO2(Thickness (nm))(139.0)(139.0)Seventh layer——Si3N4(Thickness (nm))(100.6)Eighth layer——SiO2(Thickness (nm))(139.0)Total thickness239.6718.8958.4(nm)

[0137]Frequency characteristics of the reflectance of the examples (No. 6 to No. 8) are as shown in FIG. 6. Both the example with six layers (No. 7) and the example with eight layers (No. 8) had the maximum reflectance in the vicinity of the wav...

example 3

[0138](Temperature Measurement of Electrodes at the Time of Laser Welding)

[0139]The glass frit in a paste form was printed by screen printing at a thickness of 15 μm on the peripheral portion of the glass substrate with a dimension of 40 mm in length by 50 mm in width by 0.5 mm in thickness. Thereafter, preliminary firing was performed at 500° C. for one hour to temporarily cure the glass frit, thereby manufacturing the sealing substrate.

[0140]In this case, the glass frit containing 99 mass % of the inorganic powder and 1 mass % of the pigment was used. The inorganic powder contained in the glass frit comprises 60 vol % of SnO-based glass powder and 40 vol % of the refractory filler. The SnO-based glass powder contains, as a glass composition in terms of mol %, 59% of SnO, 20% of P2O5, 5% of ZnO, 15% of B2O3, and 1% of Al2O3. Further, the glass powder has an average particle diameter D50 of 2.5 μm and a maximum particle diameter Dmax of 7 μm. The refractory filler is made of zirconi...

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Abstract

Provided is an electrical element package, comprising an element substrate on which an electrical element is provided, a sealing substrate provided at a distance from a surface of the element substrate on a side of the electrical element so as to be opposed to the element substrate, and a glass frit for hermetically sealing a gap between the element substrate and the sealing substrate so as to surround the electrical element, wherein the electrical element package comprises a protective film for protecting an electrode from laser light applied in welding the glass frit, the protective film being provided between the element substrate and the glass frit.

Description

TECHNICAL FIELD[0001]The present invention relates to an electrical element package in which an electrical element such as an OLED, sensitive to an ambient environment, is hermetically sealed to prevent deterioration caused by oxygen, water, and the like in the ambient environment.BACKGROUND ART[0002]As is known, there have been made various research and development activities on an OLED display device (OLED display). In some fields such as a small-sized display device used for a cellar phone or the like, the OLED display device has already been put into practical use.[0003]An OLED element (OLED layer) used for the OLED display device is a sensitive element which easily deteriorates when exposed to oxygen or water in an ambient environment. Therefore, for the practical use, the OLED layer is incorporated into the OLED display device in a state in which the layer is hermetically sealed so as to maintain display quality of the device and prolong a lifetime thereof.[0004]An OLED elemen...

Claims

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Application Information

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IPC IPC(8): B65D85/00
CPCC03C8/08C03C8/24B65D85/00H05B33/04H01L51/5246C03C3/19H01L2924/16195H10K50/8426H10K50/8445H10K50/858
Inventor YAMAZAKI, YASUOSHIRAGAMI, TORUMASUDA, NORIAKISAKURAI, TAKESHIYAMAZAKI, HIROKI
Owner NIPPON ELECTRIC GLASS CO LTD
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