Graphene manufacturing system and the method thereof

Abstract

The present invention discloses a graphene manufacturing system and the method thereof. In the prior arts, in order to grow graphene layers, a metal foil or thin film has to be prepared and disposed either on the surface or in the vicinity of the of the work piece so as to catalyze the decomposition of carbon feedstock nearby. In contrast, the present invention uses a fluid which contains catalyst metal ions as the source of catalysts and imports the catalytic particles from outside of the working chamber. The metal particles catalyze the decomposition of carbon feedstock at high temperature and cause the direct growth of graphene layers on insulator substrates. Therefore, the present invention is able to use cost-effective materials as the source of catalysts to grow graphene for practical applications.

Description

PRIORITY CLAIM[0001]This application claims the benefit of the filing date of Taiwan Patent Application No. 101128932, filed Aug. 10, 2012, entitled “A GRAPHENE MANUFACTURING SYSTEM AND THE METHOD THEREOF,” and the contents of which is hereby incorporated by reference in its entirety.FIELD OF THE INVENTION[0002]The present invention relates to a graphene manufacturing system, and more particularly, to a method for manufacturing graphene by inputting gasiform catalyst from outside of a working chamber to react with a gasiform or solid carbon feedstock so as to form graphene layers on a surface of a work piece.BACKGROUND OF THE INVENTION[0003]Graphene is a substance made of pure carbon, with atoms arranged in a regular hexagonal pattern similar to graphite, but in a one-atom thick sheet. It is an allotrope of carbon with structure being a single planar sheet of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice. At present, graphene is the thinnest and most...

AI Technical Summary

Benefits of technology

[0012]Importantly, the work piece of the above system and method is made of silica, quartz, sapphire, glass, NaCl, silicon nitride, alumina or the combinations thereof. Moreover, the work piece can have a plasma treatment. The plasma treatment is performed by plasma having oxygen or argon. To further improve the quality of the graphene layers, carbon seeds can be configured on a surface of the work piece.

[0013]The present invention is to provide a system and a method for manufacturing graphene. The present invention is different from the prior arts, using a metal foil as a catalyst. The present invention utilizes catalytic particles from the outside of the working chamber to catalyze the decomposition of the carbon feedstock at an appropriate temperature. Then, the graphene layers can grow on surfaces of the work piece. Another difference between the invention and the prior arts is that the gasiform carrier passes through the liquid container so that the gasiform carrier can carry parts of the catalytic particle solution to form the catalyst. Thus, the large consumption of transition metal is unnecessary, therefore, the high cost problem for manufacturing graphene is solved.

Problems solved by technology

The transition metal element catalyzes the decomposition of carbon feedstock, but the graphene layers on the surface of a metal are not uniform because the catalytic effect of different metals is dissimilar.

In addition, the consumption of copper foils in the prior art is too expensive, so the high cost is a bottleneck for graphene to be used in industry.

In view of the above, how to develop a process or system for generating uniform graphene without copper foils is an urgent problem.

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