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Plasma generator

a generator and plasma technology, applied in the field of plasma generators, can solve the problems of negative influence on the accuracy and reliability of the charged particle lithography system, and achieve the effect of a larger internal volume and a larger cross-section

Inactive Publication Date: 2014-09-11
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes an arrangement for generating plasma using a primary plasma source and a secondary plasma source. The primary plasma source is located remotely from the outlet, while the secondary plasma source is located close to the outlet. This design allows for a smaller secondary plasma source to be located close to the outlet, even in tight spaces. The arrangement also includes an aperture array and an additional electrode for repelling or attracting plasma ions. The plasma generated includes both ions and radicals, and this design allows for the retention of ions and the reduction of their energy, while permitting the emission of radicals. The primary plasma source may have a larger cross-section and internal volume than the secondary source chamber, allowing for construction where the smaller secondary source chamber can fit into narrow spaces. The method may further involve stabilizing the formation of plasma in the secondary source chamber and maintaining a lower pressure therein. Overall, this arrangement and method provide a more efficient and flexible way for generating plasma in various spaces.

Problems solved by technology

The accuracy and reliability of charged particle lithography systems is negatively influenced by contamination.

Method used

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Embodiment Construction

[0032]The following describes certain embodiments of the invention, given by way of example only and with reference to the figures.

[0033]FIG. 1 shows a radio frequency (RF) plasma generator comprising a chamber 2 with an RF coil 4 around the outside of the chamber. An input gas such as oxygen or hydrogen or other suitable gas is passed into the chamber via inlet 5 and the coil 4 is energized with an RF voltage to produce a plasma including radicals, such as oxygen atom radicals, which exit the chamber via one or more outlets 6. In the following description, except where the context indicates otherwise, the term plasma is used for simplicity to denote a plasma and / or radicals produced in such a plasma generator.

[0034]Contaminants such as electron beam induced deposition (EBID), generally comprising carbon containing compounds, form on surfaces in a charged particle lithography system, such as the surfaces of beamlet manipulator elements (such as beamlet modulators, deflectors, lenses...

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PUM

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Abstract

An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) arranged for generating plasma, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to a secondary plasma source (25), and an outlet (14) for emitting at least a portion of the atomic radicals produced by the plasma from the arrangement.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The invention relates to an arrangement and method for removal of contaminant deposits, and in particular to a plasma generator for removing contaminant deposits.[0003]2. Description of the Related Art[0004]The accuracy and reliability of charged particle lithography systems is negatively influenced by contamination. An important contribution to contamination in such lithography system is caused by the build-up of deposits of contaminants. Charged particle lithography systems generate charged particles such as electrons, and generate beams of charged particles which are focused, modulated and projected onto a wafer in the lithography process. The charged particle beams interact with hydrocarbons present in the lithography system, and the resulting Electron Beam Induced Deposition (EBID) forms a carbon-containing layer on surfaces in the system. This layer of carbon-containing material affects the stability of the charge...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01J37/32
CPCH01J37/32082H05H1/30H05H1/46H05H1/466H05H1/4652H05H2242/20H01J37/3002H01J37/32862
Inventor SMITS, MARCLODEWIJK, CHRIS FRANCISCUS JESSICA
Owner ASML NETHERLANDS BV