Organic thin film transistor and method for producing same

Abstract

An organic thin film transistor includes an insulating substrate (1), gate electrodes (2, 4), a gate insulating film (3), an organic semiconductor film (5), and a source electrode (6) and a drain electrode (7). The gate electrodes include a main gate electrode (2) that is disposed in a region opposed to a channel region between the source electrode and the drain electrode in the organic semiconductor film, and a pair of auxiliary gate electrodes (4) that are disposed in respective regions opposed to the source electrode and the drain electrode on the two sides of the main gate electrode. The main gate electrode and the auxiliary gate electrodes are electrically separated from each other. The contact resistance between the source and drain electrodes and the organic semiconductor film is controlled so as to be at a low level even when the organic thin film transistor is driven in a low voltage region, and the operation frequency can be sufficiently enhanced due to the channel length being shortened.

Description

TECHNICAL FIELD[0001]The present invention relates to an organic thin film transistor using an organic semiconductor in an active layer. In particular, the present invention relates to an organic thin film transistor having an element structure that is suitable for shortening a channel length to enhance an operation frequency, and a method for producing the same.BACKGROUND ART [0002]An organic semiconductor thin film can be formed by application of a solution. Therefore, an organic thin film transistor (organic TFT) is less expensive and has lower environmental loads than a conventional TFT using an inorganic semiconductor, and an electronic element having a large area can be produced using the organic thin film transistor. Furthermore, an organic device using the organic TFT is light in weight and flexible, and thus can be used widely in various devices such as a display and an IC tag.[0003]However, the operation frequency of the current organic TFT is not yet sufficiently high com...

AI Technical Summary

Benefits of technology

This patent describes a new method for creating organic thin film transistors (OTFTs) that have improved performance in low voltage regions. By using separate main and auxiliary gate electrodes, the resistance of the organic semiconductor is reduced, allowing the transistor to operate at higher frequencies. Additionally, the method includes a separate step to form the lower gate insulating film, which makes it easy to create a structure where the main and auxiliary gate electrodes are separated from each other. Overall, this method improves the performance and reliability of OTFTs and allows them to be driven at high frequencies.

Problems solved by technology

However, the operation frequency of the current organic TFT is not yet sufficiently high compared with that of an inorganic TFT, and an enhancement of the operation frequency is desired.

However, it has been pointed out that the contact layer causes parasitic resistance between the source and drain electrodes and the organic semiconductor layer.

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