34results about How to "Suppression of contact resistance" patented technology

An Al terminal has a first bottom wall, and a pair of caulking pieces that are stood from the first bottom wall and caulked in a state where the first bottom wall covers a wire connection portion with the core wires arranged on the upper side from the underside. Thereby, the Al terminal made of Al or Al alloy can be crimped from outside the terminal fitting main body made of copper or copper alloy, and the spring back of the terminal fitting main body made of copper or copper alloy can be suppressed by the Al terminal.

A biological information measurement apparatus including a case section including a biological information detector that detects biological information on a user, a band that attaches the case section to the user, a first electrode provided on a contact surface of the case section or the band that comes into contact with the user's body, a pinched section provided as part of the band and pinched by the user with fingers, a second electrode provided on the pinched section, and an electrocardiogram detector that uses the first electrode and the second electrode to detect the user's electrocardiogram.

A crimping terminal fitting has a wire barrel (21) to be crimped and connected to core strands (31) of a wire (30). The wire barrel (21) has a base plate (23) continuously extending from a ground terminal (11) in a longitudinal direction. Two core crimping pieces (25) extend from the opposite sides of the base plate (23). A thinned portion (27) is formed at least at a leading end of each core crimping piece (25) and is thinner than the base plate (23).

A crimped electric wire with a terminal, includes: an electric wire having a core wire made of aluminum or aluminum alloy; and a terminal fitting having an electric wire crimping section for crimping the core wire partly exposed from the electric wire, wherein: a value obtained by dividing the height of the electric wire crimping section by the width of the electric wire crimping section after the crimping of the electric wire crimping section is set to 0.5 or more and 0.6 or less; and the value obtained by dividing the gross cross-sectional area of the core wire after the crimping of the electric wire crimping section by the gross cross-sectional area of the core wire before the crimping of the electric wire crimping section is set to 55% or more and 65% or less.

The invention relates to an electrochemical battery and a manufacture method thereof. The electrochemical battery using a small-size exterior package container discharges on high current. The electrochemical battery is composed of the exterior container, a battery core (7) and electrolyte, wherein the exterior container is composed of a seat (1) and a cover (6), the battery core (7) is mounted in the seat (1), the electrochemical battery comprises at least one lining membrane (2) and a connection terminal (4), the lining membrane (2) is formed on the inner side surface of the seat (1) and composed of an electronic pipe metal, the connection terminal (4) is arranged on the outer side surface of the seat (1) and electrically connected with the lining membrane (2), and a battery core lead (8) being an extension part of the battery core is welded with the lining membrane (2).

A substrate for a semiconductor device includes a substrate, a thin film transistor that is provided on the substrate, a wiring line that is provided above the thin film transistor, an interlayer insulating film that electrically isolates the wiring line from at least a semiconductor layer of the thin film transistor, and a contact hole that has a first hole being cut in the interlayer insulating film and extending in a longitudinal direction in plan view on a substrate surface and a plurality of second holes passing through the interlayer insulating film from a bottom of the first hole to reach a surface of the semiconductor layer and being arranged in the longitudinal direction of the first hole. The connect hole connects the wiring line to the semiconductor layer via the interlayer insulating film.

Disclosed is a semiconductor device (100) comprising: a semiconductor substrate (101); a first silicon carbide layer (120) which is arranged on the main surface of the semiconductor substrate (101); a first first-conductivity-type impurity region (103), a second-conductivity-type body region (104), and a second-conductivity-type contact region (131) formed in a deeper place than the first impurity region (103) in the body region and containing a second-conductivity-type impurity at a higher concentration than that in the body region, all of which are arranged in the first silicon carbide layer; a first-conductivity-type drift region (102); and a first ohmic electrode (122) which is in ohmically contact with the first impurity region (103) and the contact region (131). In the first silicon carbide layer (120), a contact trench (121) that penetrates the first impurity region (103) is provided. The first ohmic electrode (122) is arranged in the contact trench (121) so as to contact with the contact region (131) at at least a part of a lower part (121cL) of the side wall or the bottom surface (121b) of the contact trench.

In manufacturing a separator for use in a fuel cell, first, a core (31, 94) is interposed between two preforms (17, 90, 101) and a with-core separator (41, 95, 107) is formed. After this, the core is melted by heating and discharged to form multiple cooling water passages (54). Because consequently there is no need to bring separators together to form the cooling water passages, a seal becomes unnecessary. Also, since there is no need to bring separators together the electrical contact resistance also falls.

After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO₂ film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO₂ film on the top of the waveguide ridge, and burying the SiO₂ film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO₂ film of the waveguide ridge; the SiO₂ film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.

A fixed type constant velocity universal joint prevents heat generation when a high load is applied or during high-speed rotation to improve durability, and suppresses a contact resistance between a cage and inner and outer races to improve constant velocity performance. Curvature centers of track grooves of outer and inner joint members have an offset of 0 in an axial direction. Track grooves of the outer and inner joint members, which are tilted in opposite directions from each other with respect to an axis line, are alternately formed in a circumferential direction. An outer surface of the inner joint member is a spherical surface to be brought into sliding contact with an inner spherical surface of the cage. An inner surface of the outer joint member is a cylindrical surface.

The invention provides a filter cloth structural body, and the structural body can improve the dust cleaning efficiency during the regeneration of filter cloth, can save energy because of the reduction of the loss of mean pressure of the filter cloth, and can prolong the service life of the filter cloth. The structural body is formed in a manner that the filter cloth (F) is installed on a holder (C), wherein the length (Lf) of the filter cloth is shorter than the length (Lc) of a filter cloth installation part (Ca) of the holder (C). The filter cloth (F) is installed at the filter cloth installation part (Ca) of the holder (C) in an extending manner.

In a back contact type solar cell in which an impurity diffusion layer where second conductive type impurities are diffused is formed on a back surface, as a non-light receiving surface, of a first conductive type semiconductor substrate, and an electrode in contact with the impurity diffusion layer is provided, a surface concentration of the impurities in the impurity diffusion layer is not less than 5×10¹⁷ atms/cm³ and not more than 5×10¹⁹ atms/cm³, and a diffusion depth of the impurities in the impurity diffusion layer is not smaller than 1 μm and not larger than 2.9 μm from a top of the back surface. It is thereby possible to provide a high efficiency back contact type solar cell which can be manufactured by a simple method at low cost.