35results about How to "Suppression of contact resistance" patented technology

An aluminum (Al) terminal has a first bottom wall, and a pair of caulking pieces that are stood from the first bottom wall and caulked in a state where the first bottom wall covers a wire connection portion with the core wires arranged on the upper side from the underside. Thereby, the Al terminal made of Al or Al alloy can be crimped from outside the terminal fitting main body made of copper or copper alloy, and the spring back of the terminal fitting main body made of copper or copper alloy can be suppressed by the Al terminal.

A MOSFET representing a semiconductor device capable of achieving decrease in the number of steps in a manufacturing process and improvement in integration by including an electrode that can be in contact with any of a p-type SiC region and an n-type SiC region with contact resistance being sufficiently suppressed includes an n+ SiC substrate, an n− SiC layer formed on the n+ SiC substrate, and a source electrode arranged in contact with the n− SiC layer. The n− SiC layer includes an n+ source region having an n conductivity type. The source electrode includes a source contact electrode arranged in contact with the n+ source region and containing Ti, Al and Si.

Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive films being connected to one of the pair of first conductive films and the other of the pair of first conductive films, respectively; an insulating film over the semiconductor film; and a third conductive film provided in a position overlapping with the semiconductor film over the insulating film. Further, over the semiconductor film, the third conductive film is interposed between the pair of second conductive films and away from the pair of second conductive films.

A substrate for a semiconductor device includes a substrate, a thin film transistor that is provided on the substrate, a wiring line that is provided above the thin film transistor, an interlayer insulating film that electrically isolates the wiring line from at least a semiconductor layer of the thin film transistor, and a contact hole that has a first hole being cut in the interlayer insulating film and extending in a longitudinal direction in plan view on a substrate surface and a plurality of second holes passing through the interlayer insulating film from a bottom of the first hole to reach a surface of the semiconductor layer and being arranged in the longitudinal direction of the first hole. The connect hole connects the wiring line to the semiconductor layer via the interlayer insulating film.

A crimping terminal fitting has a wire barrel (21) to be crimped and connected to core strands (31) of a wire (30). The wire barrel (21) has a base plate (23) continuously extending from a ground terminal (11) in a longitudinal direction. Two core crimping pieces (25) extend from the opposite sides of the base plate (23). A thinned portion (27) is formed at least at a leading end of each core crimping piece (25) and is thinner than the base plate (23).

A semiconductor device includes a first gate trench, a second gate trench, and a dummy gate trench provided in an active region extending in an X direction; and a first gate electrode, a second gate electrode, and a dummy gate electrode extending in a Y direction crossing the active region, at least a part of which are buried in the first gate trench, the second gate trench, and the dummy gate trench, respectively. The dummy gate electrode arranged between second and third diffusion layers isolates and separates a transistor constituted by the first gate electrode and first and second diffusion layers provided on both sides of the first gate electrode, respectively, from a transistor constituted by the second gate electrode and third and fourth diffusion layers provided on both sides of the second gate electrode, respectively.

The present invention provides a surface treatment material or the like that exhibits suppressed deterioration of the characteristics of the surface of a surface treatment coating, particularly the characteristics of contact resistance and solder wettability when used in a high temperature (200 DEG C, for example) environment, without adversely affecting bending workability. The surface treatmentmaterial (1) according to the present invention has a conductive substrate (2) and a surface treatment coating (4) comprising at least one metal layer formed on the conductive substrate (2). The surface treatment coating (4) is a plating coating, is formed on the entire surface of the conductive substrate (2) or a portion thereof via a zinc-containing layer (3) having a thickness of 50 nm or lessand having zinc as a main component, or is formed on the conductive substrate (2) without using the zinc-containing layer (3), and has a bonding area percentage of 85% or more where the bonding area is the test area as measured using the tape test method stipulated by JIS H8504:1999.

The present invention aims to provide a plated terminal for connector which requires a smaller insertion force by reducing a friction coefficient and a terminal pair formed using such a plated terminal for connector. An alloy containing layer (1) made of tin and palladium and containing a tin-palladium alloy is formed on a surface of a terminal base material (2) made of copper or copper alloy. Here, the alloy containing layer (1) is preferably such that domain structures of a first metal phase (11) made of an alloy of tin and palladium are formed in a second metal phase (12) made of pure tin or an alloy having a higher ratio of tin to palladium than in the first metal phase (11).

The invention discloses a flexible transparent electric conducting film and a manufacturing method thereof. The electric conducting film comprises a flexible transparent base plate, wherein a transparent oil ink layer is coated on the surface of the flexible transparent base plate; the surface layer of the transparent oil ink layer is an electric conducting layer pasted with nano silver wires; and the nano silver wires in the electric conducting layer are mutually overlapped so as to form a uniform two-dimensional nano silver wire network. The preparation method comprises the following steps of: printing or coating the transparent oil ink on the flexible transparent base plate; coating a nano silver wire dispersing liquid uniformly on the surface of another flexible transparent base plate so as to obtain a nano silver wire thin film; and through a hot pressing or transfer printing mode, transferring and pasting the thin film to the surface layer of the transparent oil ink so as to obtain the flexible transparent electric conducting film. The electric conducting film surface provided by the invention is lower in resistance value and is high in bonding force of each layer, has favorable contact, and has good uniformity; and the preparation method is simple in technology and is low in cost, and can prepare large-area transparent electric conducting films, and the prepared transparent electric conducting film has favorable electric conducting performance.

Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive films being connected to one of the pair of first conductive films and the other of the pair of first conductive films, respectively; an insulating film over the semiconductor film; and a third conductive film provided in a position overlapping with the semiconductor film over the insulating film. Further, over the semiconductor film, the third conductive film is interposed between the pair of second conductive films and away from the pair of second conductive films.

[Problems] Providing a compact breaker which enables to reduce contact resistance and to miniaturization much more by maintaining contact positions of a stationary contact and a movable contact appropriately. [Means to solve the Problems] In a breaker comprising a stationary piece 2, a movable piece 3, a bimetal 4 and a case 6, the movable piece 3 has a second elastic portion 35 having an elastic coefficient lower than that of a first elastic portion 34, and is fixed on the case 6 at a fixation portion 33 between the first elastic portion 34 and the second elastic portion 35.