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Semiconductor device and process for production thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., to achieve the effects of increasing switching speed, reducing injection times, and low on-resistance

Inactive Publication Date: 2012-07-11
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0032] However, if the contact resistance to the body region 104 is large, the potential will be delayed to reach the end of the body region 104, and the body potential will rise by about 2.7V, and the parasitic bipolar transistor T2 formed between the source, body and drain will conduct on, so current will flow from drain to source

Method used

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  • Semiconductor device and process for production thereof
  • Semiconductor device and process for production thereof
  • Semiconductor device and process for production thereof

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no. 1 Embodiment approach

[0091] Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. In the following drawings, components having substantially the same functions as components of conventional semiconductor devices are assigned the same reference numerals. The present invention is not limited to the following embodiments. In addition, the first conductivity type may be either n-type or p-type, and in this case, the second conductivity type is p-type or n-type.

[0092] figure 1 (a) schematically shows the cross-sectional structure of the semiconductor device 100 according to the first embodiment of the present invention. The semiconductor device 100 includes a first conductivity type semiconductor substrate 101 having a main surface 101 a and a back surface 101 b and containing silicon carbide. A first silicon carbide layer of the first conductivity type is provided on the main surface 101 a of the semiconductor substrate 101 . The first silic...

no. 2 Embodiment approach

[0145] Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.

[0146] Figure 14 (a) is a schematic cross-sectional view of a semiconductor device 200 according to a second embodiment of the present invention, Figure 14 (b) is an enlarged cross-sectional view showing a contact trench structure in the semiconductor device 200 .

[0147] In the semiconductor device 200 , the sidewall lower portion 121cL of the contact trench 121 is inclined more than the sidewall upper portion 121cU. In addition, the second impurity region 132 ( figure 1 ). The first ohmic electrode 122 is in contact with the first impurity region 103 at the upper surface 120 a of the first silicon carbide layer 120 and the upper sidewall 121 cU of the contact trench 121 . Other composition and figure 1 The configuration shown is the same.

[0148] According to the present embodiment, the contact area between the contact region 131 and the first ohmi...

no. 3 Embodiment approach

[0160] Hereinafter, a third embodiment of the semiconductor device of the present invention will be described with reference to the drawings. Here, although a vertical silicon carbide MISFET is described as an example, the semiconductor device of the present invention is not limited to the illustrated example as long as it includes a silicon carbide layer and an ohmic electrode forming an ohmic contact with the silicon carbide layer. .

[0161] In the following drawings, there is a comparison with existing semiconductor devices ( Figure 37 ) components that have substantially the same function are given the same reference signs. In addition, the first conductivity type may be either n-type or p-type, and the second conductivity type is a conductivity type (p-type or n-type) different from the first conductivity type.

[0162] Figure 17 (a) schematically shows the cross-sectional structure of the semiconductor device 300 of the present embodiment. The semiconductor device ...

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Abstract

Disclosed is a semiconductor device (100) comprising: a semiconductor substrate (101); a first silicon carbide layer (120) which is arranged on the main surface of the semiconductor substrate (101); a first first-conductivity-type impurity region (103), a second-conductivity-type body region (104), and a second-conductivity-type contact region (131) formed in a deeper place than the first impurity region (103) in the body region and containing a second-conductivity-type impurity at a higher concentration than that in the body region, all of which are arranged in the first silicon carbide layer; a first-conductivity-type drift region (102); and a first ohmic electrode (122) which is in ohmically contact with the first impurity region (103) and the contact region (131). In the first silicon carbide layer (120), a contact trench (121) that penetrates the first impurity region (103) is provided. The first ohmic electrode (122) is arranged in the contact trench (121) so as to contact with the contact region (131) at at least a part of a lower part (121cL) of the side wall or the bottom surface (121b) of the contact trench.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a silicon carbide power semiconductor device. Background technique [0002] A power semiconductor device is a semiconductor element used in high withstand voltage and high current applications, and it is desired to have low loss. In addition, recently, power semiconductor devices are used in high-speed inverters. High-speed operation is also required in such applications. [0003] Power semiconductor devices are fabricated using silicon (Si) substrates in the prior art. However, in recent years, power semiconductor devices using silicon carbide (SiC) substrates have attracted attention, and development has progressed (see, for example, Patent Documents 1 to 4, etc.). [0004] The insulation breakdown voltage of the silicon carbide material itself is one level higher than that of silicon. Therefore, when a power semiconductor device is produced using...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/12H01L21/28H01L21/336H01L21/768H01L23/522H01L29/78
CPCH01L29/66068H01L29/7813H01L21/0485H01L23/485H01L21/0465H01L29/7802H01L29/1095H01L29/7828H01L29/1608H01L29/4933H01L29/45H01L29/41766H01L2924/0002H01L2924/00
Inventor 工藤千秋山下贤哉庭山雅彦
Owner PANASONIC CORP
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