The present invention relates to a
cobalt (Co) and
platinum (Pt)-based multilayer thin film having a novel structure and
perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a
cobalt and
platinum-based multilayer thin film having
perpendicular magnetic anisotropy (PMA), which includes thin
cobalt layers and thin
platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt
layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic
thin layer is greater than that of a non-magnetic
thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic
tunnel junction by controlling the
perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers. Also, the multilayer thin film has excellent
thermal stability, and thus maintains its PMA
energy density even after being subjected to a heat treatment process. In addition, it enables a fine amount of in-plane
magnetic anisotropy to be formed by heat treatment so as to reduce the
critical current density required for
magnetization switching. Therefore, it may be advantageously used for high-performance and high-density MRAM.