The present invention relates to a 
cobalt (Co) and 
platinum (Pt)-based multilayer thin film having a novel structure and 
perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a 
cobalt and 
platinum-based multilayer thin film having 
perpendicular magnetic anisotropy (PMA), which includes thin 
cobalt layers and thin 
platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt 
layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic 
thin layer is greater than that of a non-magnetic 
thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic 
tunnel junction by controlling the 
perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers. Also, the multilayer thin film has excellent 
thermal stability, and thus maintains its PMA 
energy density even after being subjected to a heat treatment process. In addition, it enables a fine amount of in-plane 
magnetic anisotropy to be formed by heat treatment so as to reduce the 
critical current density required for 
magnetization switching. Therefore, it may be advantageously used for high-performance and high-density MRAM.