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Semiconductor device

a technology of semiconductor devices and inductance, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of become more difficult to suppress the inductance of wirings

Inactive Publication Date: 2017-05-25
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The solution effectively suppresses inductance within the semiconductor device, allowing for increased current capacity without enlarging the module, thus enhancing efficiency in power conversion applications.

Problems solved by technology

Because the capacity of a current that is output in this manner is large but the current path from a portion where the current is input to a portion where the current is output is long, it is difficult to suppress the inductance of a wiring.
Moreover, because the current path becomes longer due to an increase in size, it becomes more difficult to suppress the inductance of a wiring.

Method used

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  • Semiconductor device
  • Semiconductor device
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Examples

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Embodiment Construction

[0028]Hereinafter, embodiments will be described using the accompanying drawings.

[0029]First, a semiconductor device will be described using FIGS. 1A and 1B.

[0030]FIGS. 1A and 1B illustrate the semiconductor device in an embodiment.

[0031]Note that, FIG. 1A is the top view of a semiconductor device 100, while FIG. 1B is the cross sectional view along the one-dot chain line X-X of FIG. 1A.

[0032]The semiconductor device 100 includes: a metal base 110 made from the material, such as copper, excellent in thermal radiation; and four semiconductor units 200a, 200b, 200c, and 200d arranged in 2 rows and 2 columns on the metal base 110 (hereinafter, these semiconductor units will be collectively referred to as also semiconductor units 200). Note that the semiconductor unit 200 includes a MOSFET and an SBD (Schottky Barrier Diode), and has a three-level inverter circuit formed therein.

[0033]Moreover, for the semiconductor units 200 arranged in this manner, the semiconductor device 100 has arr...

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PUM

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Abstract

In a semiconductor device, a plurality of semiconductor units is electrically connected in parallel using a connecting device. The connecting device includes a first connecting unit and a second connecting unit. The first connecting unit is electrically connected to a control terminal of each semiconductor unit. The second connecting unit is electrically connected to a main terminal of each semiconductor unit.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2015-229460, filed on Nov. 25, 2015, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]Embodiments discussed herein relate to semiconductor devices.[0004]2. Background of the Related Art[0005]A semiconductor device called a power semiconductor module includes a semiconductor chip having formed therein semiconductor elements, such as an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and an FWD (Free Wheeling Diode), and is widely used as a power conversion device.[0006]Then, a power semiconductor module with a three-level inverter circuit is recently applied in the fields of wind power generation, solar power generation, and the like where an increase in efficiency is demanded, (e.g., see Japanese...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01R4/30H01L23/498H01R12/58H01L23/50
CPCH01R4/30H01R12/58H01L23/49811H01L23/50H01L23/48H01L23/535H01L25/07H01R12/523H01L24/01H01L25/072H01L25/115H01L2924/10272H01L2924/13055H01L2924/13091H01L23/3735H01L23/49844H01L23/5385H01L2224/0603H05K7/14329H05K7/1432
Inventor NAKAMURA, HIDEYO
Owner FUJI ELECTRIC CO LTD