Semiconductor apparatus and method for preparing the same

Abstract

The present disclosure is directed to a semiconductor apparatus having a plurality of bonded semiconductor devices formed by a fusion bonding technique and a method for preparing the same. The semiconductor devices have conductive portions with higher coefficient of thermal expansion than their dielectric portions. By forming the depression to provide a space for the volume expansion of the conductive portion with higher coefficient of thermal expansion during the subsequent thermal treating process of the fusion bonding, the semiconductor apparatus formed of semiconductor devices by the fusion bonding technique does not exhibit a lateral protrusion into the interface between the two dielectric portions. As a result, the failure of the electrical function due to the lateral protrusion is effectively eliminated.

Description

PRIORITY CLAIM AND CROSS-REFERENCE[0001]This patent application is a divisional application of and claims priority to U.S. patent application Ser. No. 15 / 434,606, filed on Feb. 16, 2017, which is incorporated by reference in its entirety.TECHNICAL FIELD[0002]The present disclosure relates to a semiconductor apparatus and a method for preparing the same, and particularly relates to a semiconductor apparatus having a plurality of bonded semiconductor devices formed by a fusion bonding technique and a method for preparing the same.DISCUSSION OF THE BACKGROUND[0003]Semiconductor devices are essential for many modern applications. With the advancement of electronic technology, semiconductor devices are becoming smaller in size while having greater functionality and greater amounts of integrated circuitry. Due to the miniaturized scale of semiconductor devices, chip-on-chip technique is now widely used for manufacturing semiconductor devices. Numerous manufacturing processes such as epita...

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Benefits of technology

[0022]The present disclosure is directed to a semiconductor apparatus having a plurality of bonded semiconductor devices formed by a fusion bonding technique and a method for preparing the same. The semiconductor devices have conductive portions with higher coefficient of thermal expansion than their dielectric portions. By forming the depression to provide a space for the volume expansion of the conductive p

Problems solved by technology

However, the manufacturing of semiconductor devices in a miniaturized scale is becoming more complicated.

An increase in the complexity of manufacturing semiconductor devices may cause deficiencies

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