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Light emitting device and method of fabricating the same

a technology light emitting diodes, which is applied in the direction of semiconductor devices, photovoltaic energy generation, solid-state devices, etc., can solve the problems of reducing the reliability and luminous efficacy affecting the efficiency of light emitting diodes, and generating large amounts of heat for light emitting diodes. achieve the effect of improving reliability and luminous efficacy, improving heat dissipation

Inactive Publication Date: 2018-09-06
SEOUL VIOSYS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent relates to a light emitting device which includes a metal bulk to improve heat dissipation and prevent damage from heat. The metal bulk reduces stress on the light emitting structure, which improves reliability and luminous efficacy. The method of fabricating the device allows for the inclusion of the metal bulk through a wafer-level package process, which increases efficiency. Additionally, the metal bulk prevents damage to the light emitting structure upon removal of the growth substrate, achieving improved reliability and luminous efficacy.

Problems solved by technology

The light emitting diode generates large amounts of heat during light emission.
This causes decrease in recombination rate of hole and electrons in the light emitting diode, thereby deteriorating internal quantum efficiency of the light emitting diode and reducing luminous efficacy.
In order to solve this problem, the light emitting diode employs a heat dissipation pad, but still suffers damage caused by thermal stress applied to the light emitting diode upon light emission.
However, separation of the growth substrate from the semiconductor layers provides a problem of easy damage to a thin semiconductor layer.

Method used

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  • Light emitting device and method of fabricating the same
  • Light emitting device and method of fabricating the same
  • Light emitting device and method of fabricating the same

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Embodiment Construction

[0054]Hereinafter, exemplary embodiments of the invention will be described in more detail with reference to the accompanying drawings. The following embodiments are provided by way of example so as to fully convey the spirit of the present invention to those skilled in the art to which the present invention pertains. Accordingly, the present invention is not limited to the embodiments disclosed herein and may also be implemented in different forms. In the drawings, widths, lengths, thicknesses, and the like of elements may be exaggerated for clarity and descriptive purposes. When an element or layer is referred to as being “placed on” or “disposed on” another element or layer, it may be directly “placed on” or “disposed on” the other element or layer or intervening elements or layers may be present. Throughout the specification, like reference numerals denote like elements having the same or similar functions.

[0055]FIG. 1 shows views illustrating a light emitting device according t...

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Abstract

A method of fabricating a light emitting device using a wafer level package process and a light emitting device fabricated by the same are disclosed. The light emitting device has improved heat dissipation to prevent damage by heat, thereby achieving improvement in reliability and luminous efficacy. In addition, the light emitting device has a small difference in coefficient of thermal expansion and thus can reduce stress applied to a light emitting structure to prevent damage to the light emitting structure, thereby achieving improvement in reliability and luminous efficacy.

Description

TECHNICAL FIELD[0001]The present invention relates to a light emitting device and a method of fabricating the same, and more particularly, to a method of fabricating a light emitting device in which a metal bulk is formed on an electrode, and a light emitting device fabricated by the same.BACKGROUND ART[0002]A light emitting diode (LED) is a solid state device capable of converting electric energy into light, and generally includes an active layer of at least one semiconductor material interposed between semiconductor layers doped with opposite conductive type impurities. When bias is applied across these doped layers, electrons and holes are injected into the active layer and recombine with each other to generate light.[0003]Typically, a light emitting diode is used as a light emitting diode module. The light emitting diode module is generally fabricated by fabricating a light emitting diode chip having electrodes at a wafer level, followed by a packaging process and a module proce...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L51/50H01L51/44H01L33/46H01L33/00H01L33/44
CPCH01L33/44H01L33/0079H01L51/504H01L51/442H01L33/46H01L33/20H01L33/22H01L33/38H01L33/62Y02E10/549H01L33/0093H10K50/13H10K30/82
Inventor JANG, JONG MINCHAE, JONG HYEONSUH, DAE WOONG
Owner SEOUL VIOSYS CO LTD
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