Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same
a heterogeneous platform and semiconductor technology, applied in semiconductor/solid-state device testing/measurement, program control, instruments, etc., can solve the problems of increasing the difficulty of producing critical dimension (cd) or resolution of patterned features, reducing the efficiency of the system, and reducing the amount of resources used. , to achieve the effect of reducing the potential for added particles, reducing workpiece movement, and minimizing the exposure of different environments
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[0245]FIGS. 13A-13E set forth one example of active interdiction in area selective deposition for removal of undesired nuclei on a self-aligned mono layer through active interdiction.
[0246]Referring now to FIGS. 13A-13E, according to one exemplary embodiment, the manufacturing platform with an active interdiction control system may be configured to perform and monitor a method of area selective deposition on a substrate and to gather measurement data and other data. In this embodiment, the substrate 1300 contains a base layer 1302, an exposed surface of a first material layer 1304 and an exposed surface of a second material layer 1306. In one example, the substrate includes a dielectric layer 1304 and a metal layer 1306. For example, the metal layer 1306 can contain Cu, Al, T a, Ti, W, Ru, Co, Ni, or Mo. The dielectric layer 1304 can, for example, contain SiO2, a low-k dielectric material, or a high-k dielectric material. Low-k dielectric materials have a nominal dielectric constant...
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