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Measuring method for measuring concentration of donor element solid-solved in ceramic grains in ceramic dielectric layers

a technology of ceramic dielectric layer and concentration measurement method, which is applied in the direction of fixed capacitor, stacked capacitor, fixed capacitor details, etc., can solve the problem that the donor element in the dielectric layer is not defined

Inactive Publication Date: 2020-03-19
TAIYO YUDEN KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach effectively suppresses leak current and enhances the life property of the dielectric layer by ensuring the donor elements contribute optimally to the dielectric layer's performance, maintaining a balance between insulating and bias properties.

Problems solved by technology

However, in the technologies, a position of the donor element in the dielectric layer is not defined.

Method used

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  • Measuring method for measuring concentration of donor element solid-solved in ceramic grains in ceramic dielectric layers
  • Measuring method for measuring concentration of donor element solid-solved in ceramic grains in ceramic dielectric layers
  • Measuring method for measuring concentration of donor element solid-solved in ceramic grains in ceramic dielectric layers

Examples

Experimental program
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Effect test

embodiment

[0015]FIG. 1 illustrates a partial perspective view of a multilayer ceramic capacitor 100 in accordance with an embodiment. As illustrated in FIG. 1, the multilayer ceramic capacitor 100 includes a multilayer chip 10 having a rectangular parallelepiped shape, and a pair of external electrodes 20a and 20b that are respectively provided at two edge faces of the multilayer chip 10 facing each other. In four faces other than the two edge faces of the multilayer chip 10, two faces other than an upper face and a lower face of the multilayer chip 10 in a stacking direction are referred to as side faces. The external electrodes 20a and 20b extend to the upper face, the lower face and the two side faces. However, the external electrodes 20a and 20b are spaced from each other.

[0016]The multilayer chip 10 has a structure designed to have dielectric layers 11 and internal electrode layers 12 alternately stacked. The dielectric layer 11 includes ceramic material acting as a dielectric material. ...

example 1

[0040]In an example 1, barium titanate was used as the main component ceramic of the dielectric layer 11. Mo was used as the donor element. MoO3 was added to the main component ceramic powder so that Mo is 0.2 atm % on a presumption that Ti of the main component ceramic powder is 100 atm %. The resulting main component ceramic powder was sufficiently wet-blended and crushed with a ball mil. Thus, the dielectric material was obtained. An organic binder and a solvent were added to the dielectric material. And dielectric green sheets were made by a doctor blade method. The organic binder was polyvinyl butyral (PVB) resin or the like. The solvent was ethanol, toluene or the like. And a plasticizer and so on were added. Next, the conductive paste for forming the internal electrode layer 12 was made by mixing powder acting as a main component metal of the internal electrode layer 12, a binder, a solvent and an additive as needed. The organic binder and the solvent were different from thos...

example 2

[0041]In an example 2, a main component ceramic powder in which 0.05 atm % of Mo was solid-solved in advance was used as the dielectric material. A Mo source was not added to the main component ceramic powder. Other conditions were the same as those of the example 1.

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Abstract

A measuring method for measuring a concentration of a donor element which is solid-solved in ceramic grains of a plurality of ceramic dielectric layers, includes measuring (a current value at 10 V / μm when a direct voltage is applied to a plurality of ceramic dielectric layers at 125 degrees C.) / (a current value at 10 V / μm when a direct voltage is applied to the plurality of the ceramic dielectric layers at 85 degrees C.), with respect to a multilayer ceramic capacitor having a multilayer structure in which each of the plurality of ceramic dielectric layers and each of a plurality of internal electrode layers are alternately stacked.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is a divisional application of U.S. patent application Ser. No. 15 / 889,071, filed on Feb. 5, 2018, which is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2017-027330, filed on Feb. 16, 2017, the entire contents of both of which are incorporated herein by reference.FIELD[0002]A certain aspect of the present invention relates to a multilayer ceramic capacitor and a manufacturing method of a multilayer ceramic capacitor.BACKGROUND[0003]A thickness of a dielectric layer is being reduced because downsizing and enhancement of a capacitance of a multilayer ceramic capacitor are demanded. As a result, electric field intensity applied to the dielectric layer increases. Thereby, life property of the dielectric layer is degraded. And so, it is proposed that a donor element such as Mo (molybdenum), W (tungsten) or the like is added to a dielectric layer in order to improve life property (fo...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01G4/12H01G4/30
CPCC04B2235/3251C04B2235/78B32B2315/02C04B2235/3256C04B2235/3258H01G4/30B32B2457/16C04B2235/3239H01G4/1227C04B2235/3206H01G4/1209H01G13/003H01G4/012
Inventor TANIGUCHI, KATSUYA
Owner TAIYO YUDEN KK