Low Voltage Level Shifter For Integrated Circuit
a level shifter and integrated circuit technology, applied in the field of level shifters, can solve the problems of design not working well in a system, level shifters b>400 level shifters b>300/b> can fail altogether, etc., to achieve the effect of improving the level shifter
Active Publication Date: 2021-06-03
SILICON STORAGE TECHNOLOGY
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Benefits of technology
The patent text describes an improved level shifter that can switch quickly using low power. The level shifter has two stages: a coupling stage and a level-switching stage. The technical effect of this improvement is faster switching times while using lower voltage levels.
Problems solved by technology
This is due to the inherent variability in the current driving capability of each transistor.
In addition, level shifter 300 can fail altogether if the peak voltage of A and A-BAR is too low, i.e. insufficient to fully turn on NMOS transistors 301, 302, respectively, due to low supply voltage VDDL in FIG. 2 being too low.
In addition, level shifter 400 can fail altogether if the peak voltage of A and A-BAR are too low due to low supply voltage VDDL in FIG. 2 being too low.
However, even the improved design of FIGS. 5-7 has some drawbacks.
Specifically, the design does not work well in a system where the available supply voltages are 0.8 V or lower, because level-shifting stage 700 requires transistors that use a 2.5 V supply voltage.
In addition, the design of FIGS. 5-7 is relatively complex and requires a relatively significant amount of space within the semiconductor die.
Method used
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[0047]FIG. 8 depicts level shifter 800, which comprises coupling stage 900 and level-shifting stage 1000. When level shifter 800 receives a “0” as an input, where “0” is a first voltage, it outputs a “0”, i.e. the first voltage, and when it receives a “1” of a first voltage domain (VDDL), which is a second voltage, as an input, and it outputs a “1” of a second voltage domain (VDDH, ranging between 1.4V and 2.75V), which is a third voltage different from the first or second voltages.
[0048]FIG. 9 depicts coupling stage 900, which comprises first circuit 910 and second circuit 920, both powered by low voltage power source 930 (VDDL), whose range is between 0.75V and around 1.26V. First circuit 910 comprises PMOS transistor 912 and capacitor 911. Second circuit 920 comprises PMOS transistor 922 and capacitor 921. The gate of PMOS transistor 912 is connected to a first terminal of capacitor 911, the drain of PMOS transistor 912 is connected to low voltage power source 930 and the source ...
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An improved level shifter is disclosed. The level shifter is able to achieve a switching time below 1 ns using a relatively low voltage for VDDL, such as 0.75V. The improved level shifter comprises a coupling stage and a level-switching stage. A related method of level shifting is also disclosed.
Description
PRIORITY CLAIM[0001]This application claims priority to Chinese Patent Application No. 201911192206.8, filed on Nov. 28, 2019, and titled, “Low Voltage Level Shifter For Integrated Circuit,” which is incorporated by reference herein.FIELD OF THE INVENTION[0002]An improved level shifter capable of operating at high speeds and a low operating voltage is disclosed.BACKGROUND OF THE INVENTION[0003]Level shifters are important components in integrated circuits. Level shifters convert digital signals from a first voltage domain into a second voltage domain, which is an essential function when different portions of an integrated circuit operate within different voltage domains.[0004]FIG. 1 depicts the conceptual operation of level shifter 100, including level shifters known in the prior art. In this example, in voltage domain 101 (V1), a “1” is represented by 1V and a “0” by OV, and in voltage domain 102 (V2), a “1” is represented by 2.5V and a “0” by 0V. Level shifter 100 converts a “1” f...
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IPC IPC(8): H03K3/356H03K19/0185H03K19/003H03K19/185
CPCH03K3/356113H03K19/185H03K19/00384H03K19/018521H03K19/017H03K19/0185
Inventor MEI, RYANQIAN, XIAOZHOUTRAN, HIEU VANZHU, CLAIRE
Owner SILICON STORAGE TECHNOLOGY