Transient-voltage-suppression diode structure and manufacturing method thereof
a diode and voltage-suppression technology, applied in the field of diodes, can solve the problems of difficult to obtain a zener diode structure having a low breakdown voltage, difficult to increase the concentration of n+ type implant layers, etc., to reduce the distance of deep implantation, reduce the difficulty of manufacturing process, and reduce the effect of parasitic resistan
Active Publication Date: 2021-06-10
MOSEL VITELIC INC
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Benefits of technology
The present invention provides a better way to manufacture a transient-voltage-suppression diode structure using polycrystalline plugs. This helps to solve problems of difficulty in controlling and concentration increase. The structure also reduces parasitic resistance and improves performance. Overall, this method makes it easier to manufacture and improve the diode structure.
Problems solved by technology
However, when the thickness of the N− type epitaxial layer 15 is very thick, it is difficult to increase the concentration of the N+ type implant layer 22 and the deep N+ type implant layer 23 by a general doping and drive-in procedure.
Thus, it is difficult to obtain a Zener diode structure having a low breakdown voltage.
Method used
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[0028]The present disclosure will now be described more specifically with reference to the following embodiments. It should be noted that the following descriptions of preferred embodiments of this disclosure are presented herein for purpose of illustration and description only. It is not intended to be exhaustive or to be limited to the precise form disclosed.
[0029]FIG. 2 is a cross sectional view illustrating a transient-voltage-suppression diode structure according to an embodiment of the present disclosure. In the embodiment, the transient-voltage-suppression diode structure 3 includes a substrate 30, at least one N− type epitaxial layer 35, a first metal layer 37, a first N+ type implant layer 42, a deep N+ type implant layer 43 and a plurality of polycrystalline plugs 44. The at least one N− type epitaxial layer 35 is disposed on the substrate 30. Preferably but not exclusively, in the embodiment, the substrate 30 includes a P+ type base layer 32 and an N type epitaxial layer ...
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Abstract
A transient-voltage-suppression diode structure and a manufacturing method thereof are disclosed. The structure includes a substrate, an N− type epitaxial layer, a first metal layer, a first N+ type implant layer, a deep N+ type implant layer and plural polycrystalline plugs. The N− type epitaxial layer is disposed on the substrate. The first metal layer is disposed on the N− type epitaxial layer to form a working-voltage terminal. The first N+ type implant layer spatially corresponding to the working-voltage terminal and embedded in the N− type epitaxial layer is connected with the working-voltage terminal. The deep N+ type implant layer spatially corresponding to the working-voltage terminal and embedded in the N− type epitaxial layer is spaced apart from the first N+ type implant layer at a separation distance. The plural polycrystalline plugs are connected between the working-voltage terminal of the first metal layer and the deep N+ type implant layer.
Description
FIELD OF THE INVENTION[0001]The present disclosure relates to a diode structure, and more particularly to a transient-voltage-suppression diode structure and a manufacturing method thereof.BACKGROUND OF THE INVENTION[0002]A transient-voltage-suppression diode, also called as a TVS diode, is an electronic device used to protect electronics from voltage spikes induced on connected wires. In recent years, as the development of electronic systems has become more sophisticated, the demand for TVS device has become more and more urgent.[0003]A conventional TVS device includes a Zener diode utilized to conduct the current when the device is collapsed, so that the current does not flow into the protected circuit. The Zener diode has characteristics such as large leakage current and large junction capacitance. For being applicable of the TVS device, the Zener diode tends to develop in low voltage applications.[0004]FIG. 1 is a cross sectional view illustrating a conventional TVS diode struct...
Claims
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IPC IPC(8): H01L29/866H01L27/02H01L29/66H01L21/265
CPCH01L29/866H01L21/26513H01L29/66106H01L27/0255H01L21/2253H01L29/0649H01L29/417
Inventor LO, HSIU-FANGCHANG, YU-HSUAN
Owner MOSEL VITELIC INC