Projection exposure system having a reflective reticle
a technology of projection exposure and reflective reticle, which is applied in the direction of instruments, photomechanical devices, lenses, etc., can solve the problems of difficult processing of transmission reticles (that, masks operated in transmission for microlithography), and high cost of transmission reticles
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[0041]FIG. 1 shows a typical configuration of a projection exposure system for microlithography in accordance with an embodiment of the invention. The reflective reticle 5 is imaged via demagnifying imaging optics onto the wafer 6 at a typical imaging scale β of −0.25±0.15. The illuminated field on the wafer 6 has a diameter of at least 10 mm. Rectangular fields having an x-y aspect ratio of 1:1 to 1:4 are typical. The image end numerical aperture is greater than 0.5. The imaging takes place via the optical elements 71 and 72. A beam splitter cube 3 is integrated into the imaging beam path 200 of the reduction objective between reflective reticle 5 and wafer 6 for illuminating the reflective reticle 5. The beam splitter cube can, for example, be a polarization beam splitter cube wherein a layer system is located between the prism surfaces. This layer system almost completely reflects polarized light parallel to the beam splitter surface 30; however, the beam splitter surface 30 is l...
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