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Ferroelectric film alternating electric field heat treatment method

A heat treatment method and ferroelectric thin film technology, applied in the field of heat treatment technology, can solve the problem of high material cost

Inactive Publication Date: 2007-11-07
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the existing substrate is Pt / Ti / SiO 2 There is a high residual stress in the ferroelectric film of / Si, and the problem of high material cost when the epitaxial ferroelectric film is deposited on a single crystal substrate to reduce the residual stress, thus providing an alternating electric field heat treatment method for a ferroelectric film, It can reduce the substrate to Pt / Ti / SiO 2 / Si ferroelectric thin film residual stress, and the process steps are simple and easy to operate, compared with the choice of single crystal substrate deposition epitaxial ferroelectric thin film to reduce residual stress and low cost

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  • Ferroelectric film alternating electric field heat treatment method
  • Ferroelectric film alternating electric field heat treatment method
  • Ferroelectric film alternating electric field heat treatment method

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specific Embodiment approach 1

[0008] Specific embodiment one: as shown in Figure 1, this specific embodiment is carried out according to the following steps: One, in Pt / Ti / SiO 2 Deposit ferroelectric thin film material on / Si substrate, and carry out high-temperature annealing crystallization, form ferroelectric thin film 1; 2, carry out secondary annealing to described ferroelectric thin film 1, and introduce alternating electric field in described secondary annealing process, The action direction of the alternating electric field is perpendicular to the film surface of the ferroelectric thin film 1, and the film surface of the ferroelectric thin film 1 faces upward and is kept isolated from the upper plate 2-1 of the alternating electric field generator. The purpose of keeping the film surface of the ferroelectric thin film 1 in an isolated state from the upper plate 2-1 is to avoid the clamping effect.

specific Embodiment approach 2

[0009] Specific embodiment two: as shown in Figure 1, in specific embodiment one, the generating device of described alternating electric field is made up of adjustable transformer 3, upper polar plate 2-1 and lower polar plate 2-2, and mains power One end is connected to the input end of the upper pole plate 2-1 through the adjustable transformer 3, and the other end of the mains is connected to the input end of the lower pole plate 2-2 through the adjustable transformer 3, and the upper pole plate 2-1 and the lower pole plate 2-2 are two conductive metal electrodes insulated from each other. Fix the distance between the upper pole plate 2-1 and the lower pole plate 2-2, then change the voltage applied between the upper pole plate 2-1 and the lower pole plate 2-2 by adjusting the output voltage of the adjustable transformer 3, The alternating electric field is thereby obtained. Using this method to obtain the required alternating electric field is simple, convenient and low ...

specific Embodiment approach 3

[0010] Embodiment 3: In Embodiment 1, the Curie point of the ferroelectric thin film material is in the range of 300°C to 800°C.

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Abstract

The alternating electric field thermal treatment method for ferroelectric film, special to reduce residual stress in ferroelectric ceramics film, comprises: 1. depositing ferroelectric film material on Pt / Ti / SiO2 / Si base, annealing and crystallizing at high temperature to form film 1; 2.taking secondary anneal to the film 1 with alternating electrc field. This invention is used to ferroelectric ceramics film material with 300~800Deg Curie temperature, can decrease residual stress and process cost.

Description

Technical field: [0001] The invention relates to a heat treatment process, in particular to a heat treatment method for reducing the residual stress of a ferroelectric ceramic film. Background technique: [0002] In recent years, ferroelectric ceramics and their thin film materials, especially lead zirconate titanate Pb(Zr,Ti)O 3 (PZT) thin films are receiving widespread attention. This ceramic material has excellent piezoelectric, pyroelectric and ferroelectric properties, and the potential superiority of its thin film materials has received great attention, and has been applied in the fields of integrated circuits, aviation, micro-electromechanical systems and general engineering Inside. Although commercial applications have appeared, device fatigue and performance stability have always been the bottlenecks restricting the practical application of this type of thin film. Residual stress is an endogenous nature of thin film materials, which has become a difficulty in furt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/64C04B41/80C04B35/472C04B35/491
Inventor 费维栋杨帆
Owner HARBIN INST OF TECH
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