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Production of sulfur compound phase-variable memory

A technology of compound phase and nano-sulfur, which is applied in the direction of electrical components, etc.

Active Publication Date: 2007-12-19
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the device size of CRAM memory needs to be further reduced, so as to further reduce the power consumption of the device.

Method used

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  • Production of sulfur compound phase-variable memory
  • Production of sulfur compound phase-variable memory
  • Production of sulfur compound phase-variable memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0019] Embodiment 2: containing Sb 2 Te 3 , the preparation of the phase-change memory of nano-dots, the steps are

[0020] Step 1: Same as (1) in Example 1.

[0021] Step 2: Under the protective atmosphere of high-purity Ar (99.99%), use the method of thermal evaporation to uniformly prepare Sb on the W bottom electrode 2 Te 3 nano dots. The diameter and height of the phase-change nano-dots are both controlled at about 50nm. Then adopt magnetron sputtering method, the substrate temperature is room temperature, deposit a layer of 50-60nm thick Sb on the nano dots 2 Te 3 film. A rapid thermal annealing treatment is carried out in a rapid heat treatment furnace, and the temperature is raised to 560-600°C under a protective atmosphere of high-purity Ar and kept for 5 minutes. At this point, nano-dots with larger heights have been formed on the electrodes.

[0022] Step 3: Same as (1) in Example 1.

Embodiment 3

[0023] Embodiment 3: containing Sb 2 Te 3 The preparation of the phase-change memory of nano-dot, its step is

[0024] Step 1: Same as (1) in Example 1.

[0025] Step 2: Under the protective atmosphere of high-purity Ar (99.99%), use the method of thermal evaporation to uniformly prepare Ge on the W bottom electrode 2 Sb 4 Te 7 nano dots. The diameter and height of phase-change nanodots are both controlled at about 20nm. Then use magnetron sputtering method, the substrate temperature is room temperature, deposit a layer of 20-30nm thick Ge on the nano dots 2 Sb 4 Te 7 film. A rapid thermal annealing treatment is carried out in a rapid thermal treatment furnace, and the temperature is raised to 570-600 ° C under a protective atmosphere of high-purity Ar and kept for 5 minutes. At this point, nano-dots with larger heights have been formed on the electrodes.

[0026] Step 3: Same as (1) in Example 1.

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Abstract

A process for preparing a phase-change memory from nano-class sulfur compound includes such steps as growing SiO2 layer on substrate, depositing a bottom electrode layer, uniformly growing phase-change nanodots, depositing a phase-change film layer, annealing, depositing a SiO2 layer, CMP polishing and depositing top electrodes.

Description

technical field [0001] The invention relates to a preparation method of a nano chalcogenide intersecting memory, which belongs to the manufacturing process in microelectronics. Background technique [0002] Memory is mainly measured by indicators such as speed, power consumption, price, cycle life and non-volatility. There are a variety of semiconductor storage technologies, including conventional volatile storage technologies, such as static random access memory (SRAM), dynamic random access memory (DRAM), and non-volatile storage technologies, such as electrically erasable programmable Read memory (EEPROM), flash memory (FLASH). Although these technologies have been able to meet a series of applications, there is currently no ideal silicon-based semiconductor process that can be used to mass-produce the high-capacity and low-cost of DRAM, the high speed of SRAM, and the non-volatile data of flash memory. Non-volatile memory with high reliability, low operating voltage, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 宋志棠马友鹏封松林陈邦明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI