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GaN base LED high reflectance electrode

An electrode, high-reflection technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low contact resistance, less light absorption, and the inability of P-type electrodes to achieve low specific contact resistance, improve output power and thermal reliability. The effect of low light absorption and low light absorption

Inactive Publication Date: 2007-12-26
BEIJING TIMESLED TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the P-type electrodes of GaN-based LEDs cannot meet the requirements of low contact resistance and light absorption at the same time, and improve the reliability, light output power and thermal reliability of GaN-based LEDs

Method used

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  • GaN base LED high reflectance electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] 1) A 300 μm × 300 μm LED sample was prepared by the common metal-organic chemical vapor deposition (MOCVD) method, the P-GaN substrate thickness was 1.5 μm, and the Mg doping was 5 × 10 17 cm -3 ;

[0017] 2) The sample is cleaned by common chemical cleaning method: HCl: H 2 The surface of the GaN in the P region was cleaned with a solution of 1:1 O for 5 minutes, and then washed with deionized water for 5 times. After washing with dry N 2 air dry;

[0018] 3) Put the sample into the reaction chamber of the Denton Discovery550 sputtering station quickly, and pump the reaction chamber to 10 -5 Vacuum below Pa;

[0019] 4) On the semiconductor surface, a metal solid solution of Ni and Mg is plated at a rate of 1 Ȧ / s at 70°C as a contact layer, the thickness is 0.7nm, and the weight ratio of Mg is 10%; the purity of Ni is 4N (99.99%);

[0020] 5) Coating a layer of 0.6nm metal Pd on the Ni-Mg solid solution at a rate of 1 Ȧ / s at 60°C;

[0021] 6) The transmittance ...

Embodiment 2

[0028] 1) A 300 μm × 300 μm LED sample was prepared by the common metal-organic chemical vapor deposition (MOCVD) method, the P-GaN substrate thickness was 1.5 μm, and the Mg doping was 5 × 10 17 cm -3 ;

[0029] 2) The sample is cleaned by common chemical cleaning method: HCl: H 2 The surface of the GaN in the P region was cleaned with a solution of 1:1 O for 5 minutes, and then washed with deionized water for 5 times. After washing with dry N 2 air dry;

[0030] 3) Put the sample into the reaction chamber of the Denton Discovery550 sputtering station quickly, and pump the reaction chamber to 10-5 Vacuum below Pa;

[0031] 4) Plating a metal solid solution of Ni and Mg on the semiconductor surface at a rate of 1 Ȧ / s at 70°C as a contact layer, the thickness is 1nm, and the weight ratio of Mg is 8%; the purity of Ni is 4N (99.99%);

[0032] 5) Coating a layer of 0.6nm metal Pd on the Ni-Mg solid solution at a rate of 1 Ȧ / s at 60°C;

[0033] 6) The transmittance of the c...

Embodiment 3

[0040] 1) A 300 μm × 300 μm LED sample was prepared by the common metal-organic chemical vapor deposition (MOCVD) method, the P-GaN substrate thickness was 1.5 μm, and the Mg doping was 5 × 10 17 cm -3 ;

[0041] 2) The sample is cleaned by common chemical cleaning method: HCl: H 2 The surface of the GaN in the P region was cleaned with a solution of 1:1 O for 5 minutes, and then washed with deionized water for 5 times. After washing with dry N 2 air dry;

[0042] 3) Put the sample into the reaction chamber of the Denton Discovery550 sputtering station quickly, and pump the reaction chamber to 10 -5 Vacuum below Pa;

[0043] 4) Plating a metal solid solution of Ni and Mg on the semiconductor surface at a rate of 2 Ȧ / s at 70°C as a contact layer, the thickness is 2nm, and the weight ratio of Mg is 7%; the metal of Ni and Mg The solid solution is purchased from the market, and the purity of Ni is 4N (99.99%);

[0044] 5) plating a layer of 0.6nm metal Pd on the Ni-Mg soli...

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Abstract

The present invention relates to one kind of GaN LED high reflectivity electrode, and belongs to the field of the photoelectronic device making technology. The electrode has the structure including from bottom to top Mg doped device to emit light, high reflectivity electrode layer to reflect the light back the semiconductor GaN substrate layer inside the device, ohmic contact layer, high reflector and protecting layer. The present invention features that the ohmic contact layer is metal Ni and Mg solid solution layer located between the substrate layer and the high reflector and contacting directly with the substrate and there is one metal Pa layer between the metal Ni and Mg solid solution layer and the high reflector. The electrode has low contact resistance, less light absorption, high light output power, high heat reliability and simple making process.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic device manufacture, in particular to a light-emitting diode (LED) electrode with a high reflection mirror. Background technique [0002] At present, GaN-based LEDs are widely used. In the application of high-power and high-brightness LEDs, people generally use a flip-chip structure, that is, a structure in which the P-type electrode is used as a high light reflection surface, and the device substrate surface is the light exit surface. There are still some difficulties in the P-type electrode technology, and its specific contact resistance is relatively large. The most effective way to reduce the specific contact resistance is to dope P-type GaN. However, the concentration of P-GaN doped with Mg is not very high, generally less than 1×10 18 cm -3 , and the presence of Mg is easy to form H-Mg bonds, resulting in dopant passivation, which is not conducive to reducing the specific contact r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 沈光地朱彦旭李秉臣郭霞董立闽
Owner BEIJING TIMESLED TECH CO LTD
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