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Transparent electrode of light-emitting diode and preparation method thereof

A technology of light-emitting diodes and transparent electrodes, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as high cost and complicated process, achieve low absorption rate, avoid process treatment, and achieve the effect of coarsening

Active Publication Date: 2019-04-16
SUN YAT SEN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] It can be seen that the existing surface roughening methods generally include dry and wet etching or based on photonic crystal technology. Although these roughening methods can improve the efficiency of light extraction, the overall process is relatively complicated and the cost is also high.

Method used

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  • Transparent electrode of light-emitting diode and preparation method thereof
  • Transparent electrode of light-emitting diode and preparation method thereof
  • Transparent electrode of light-emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Using existing MOCVD equipment, using organometallic trimethyl indium as indium source, organometallic tetrakis(dimethylamino)tin as tin source, oxygen with a purity of 99.9999% as oxygen source, argon as carrier gas and growth protection atmosphere, in Preparation of ITO transparent electrode on GaN-based ultraviolet 365nm LED.

[0042] The preparation method of the ITO transparent electrode of this embodiment is as follows:

[0043] S1. Pretreatment of gallium nitride-based LED epitaxial wafers: After cleaning the surface of gallium nitride-based ultraviolet 365nm LEDs with organic and inorganic acid and alkali, prevent contact with air and put them into the MOCVD reaction chamber as soon as possible. Then control the temperature at 600°C, control the pressure at 20 Torr, and process for 20 minutes.

[0044] S2. ITO main layer growth: the growth temperature is controlled at 530°C, the pressure of the reaction chamber is controlled at 9Torr, and the indium source, oxy...

Embodiment 2

[0048] Utilizing the existing MOCVD equipment, using organometallic trimethyl indium as indium source, organic tetramethyl tin as tin source, oxygen with a purity of 99.9999% as oxygen source, argon as carrier gas and growth protection atmosphere, on gallium nitride based ITO transparent electrodes were prepared on ultraviolet 460nm LEDs.

[0049] The preparation method of the ITO transparent electrode of this embodiment is as follows:

[0050] S1. Pretreatment of gallium nitride-based LED epitaxial wafers: After cleaning the surface of gallium nitride-based ultraviolet 460nm LEDs with organic and inorganic acid and alkali, prevent contact with air and put them into the MOCVD reaction chamber as soon as possible. Then control the temperature at 700°C and the pressure at 10 Torr for 30 minutes.

[0051] S2. ITO main layer growth: the growth temperature is controlled at 600°C, the pressure of the reaction chamber is controlled at 6Torr, and the indium source, oxygen source and ...

Embodiment 3

[0055] Utilizing the existing MOCVD equipment, using organometallic trimethyl indium as indium source, organometallic tetraethyl tin as tin source, laughing gas as oxygen source, argon as carrier gas and growth protection atmosphere, in GaN-based ultraviolet 300nm LED ITO transparent electrodes were prepared on the top.

[0056] The preparation method of the ITO transparent electrode of this embodiment is as follows:

[0057] S1. Pretreatment of gallium nitride-based LED epitaxial wafers: After cleaning the surface of gallium nitride-based ultraviolet 300nm LEDs with organic and inorganic acid and alkali, prevent contact with air and put them into the MOCVD reaction chamber as soon as possible. Then control the temperature at 300°C and the pressure at 100 Torr for 1 min.

[0058] S2. ITO main layer growth: the growth temperature is controlled at 450 ° C, the pressure of the reaction chamber is controlled at 80 Torr, and the indium source, oxygen source and tin source are intr...

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Abstract

The invention provides a transparent electrode of a light-emitting diode. A preparation method of the transparent electrode comprises the following steps: S1, carrying out chemical cleaning on the surface of an epitaxial wafer, then putting the epitaxial wafer into an MOCVD reaction chamber with temperature of 300-900 DEG C and pressure of 3-100 Torr, and treating for 1-60 minutes; S2, under the protective atmosphere, adjusting the growth temperature to 450-650 DEG C, adjusting the pressure of the reaction chamber to 3-80 Torr, then, introducing an indium source, a tin source and an oxygen source, controlling the growth speed to 0.1-3 nm / min, and growing an ITO main body layer with the thickness of 40-500 nm on the surface of the pretreated epitaxial wafer; and S3, under the protective atmosphere, adjusting the growth temperature to 300-450 DEG C, adjusting the pressure of the reaction chamber to 3-80 Torr, then, introducing an indium source, a tin source and an oxygen source, controlling the growth speed to 1-10 nm / min, and growing an ITO coarsening layer with the thickness of 20-200 nm on the ITO main body layer. The method for in-situ growth of the coarsening layer is very matched with the preparation method of a main body layer of the ITO transparent electrode, subsequent complex process treatment is avoided, and the light extraction efficiency of the LED can be effectivelyimproved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and semiconductor optoelectronic devices, and mainly relates to an ITO transparent electrode for a gallium nitride-based LED and a preparation method thereof. Background technique [0002] In the practical application of nitride-based light-emitting diodes (LEDs), due to the high resistivity and large work function of the P-type layer of LEDs, it is often necessary to use nickel-gold alloy (Ni / Au), zinc oxide doped aluminum (AZO) or Transparent conductive thin film materials such as indium tin oxide (ITO) act as transparent electrodes to achieve current spreading effect and lower specific contact resistance. The transparent electrode film materials used above are widely used because of their high transmittance of visible light (400-760nm) and low resistivity. [0003] Among many transparent conductive materials, ITO film is currently the most widely used transparent conductive mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/42
CPCH01L33/42H01L2933/0016
Inventor 王钢卓毅陈梓敏马学进练海啸
Owner SUN YAT SEN UNIV
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