Polycrystalline silicon annealing arrangement applied to high-performance thin film transistor and method thereof

Abstract

This invention relates to multi-silicon annealing structure and method applied in the film transistor, which comprises the following steps: forming source electrode and leakage electrode on the glass board and coating metal pattern on the non-silicon film to make the pre-set grating electrode area form side crystalline area to form multiple-silicon annealing structure; combining the semi-module laser annealing from other surface to the glass base board to form the melting status by the mole laser beam; the metal layer area reflecting the semi-molecule laser beam.

Description

technical field [0001] The invention relates to a polysilicon annealing structure and a method thereof, in particular to a polysilicon annealing structure and a method applied to high-efficiency thin film transistors. Background technique [0002] Thin-film transistors (thin-film transistors, TFT) can be applied to driving elements of liquid crystal displays (liquid crystal display, LCD). Since amorphous silicon (a-Si) thin-film transistors can be manufactured at a low temperature of 200-300 ° C, they are used Widely used in LCDs. At present, almost all thin film transistor liquid crystal displays (TFT-LCDs) on the market use amorphous silicon (α-Si) thin film transistors as switching elements in pixel regions. However, the electron mobility of amorphous silicon is low, no more than 1cm 2 / V.s, but if the driving circuit is to be integrated on the glass substrate, the amorphous silicon (α-Si) thin film transistor is not enough for the current high-speed component applicati...

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Problems solved by technology

However, using these methods requires additional equipment, which increases the equipment cost of the manufacturing process, and is not easy to integrate into the existing manufacturing process.

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