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Method for preventing clearance generation between different materials in semiconductor device

A semiconductor and device technology, applied in the field of preventing voids between different materials in semiconductor devices, can solve the problems of inability to form memory cell contacts, inability to completely corrode the W layer, etc., so as to eliminate the decrease in qualification rate and stabilize the source and drain electrodes. The effect of contact resistance

Inactive Publication Date: 2008-01-16
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] In order to prevent gaps between the contact plugs and the memory cell contacts formed by the W layer, technicians attempt to reduce the corrosion effect of the plasma etching gas. As a result, the W layer cannot be completely etched and the required W layer composition cannot be formed. storage unit contacts

Method used

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  • Method for preventing clearance generation between different materials in semiconductor device
  • Method for preventing clearance generation between different materials in semiconductor device
  • Method for preventing clearance generation between different materials in semiconductor device

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Embodiment Construction

[0066] The method of the present invention will be described in detail below with reference to FIGS. 10 to 17 , and the method of manufacturing a memory cell contact in a 0.18 μm NAND flash memory is taken as an example to describe the present invention in detail.

[0067] Fig. 10 is the 0.18 μm "NAND" flash memory after depositing and reflowing phosphoborosilicate glass (BPSG) for the first time with the manufacturing method of the present invention after determining the grid in the 0.18 μm "NAND" flash memory The structure is the same as Fig. 4 according to the schematic diagram of the cross-sectional structure cut by B-B' line in Fig. 1;

[0068] Fig. 11 is the 0.18 μm "NAND" flash memory structure cut by the B-B' line in Fig. 1 after the first photolithographic etching of the memory cell contacts (CCT) according to the method of the present invention, which is the same as Fig. 5;

[0069] Fig. 12 is a 0.18 μm "NAND" flash memory structure cut by line B-B' in Fig. 1 after d...

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Abstract

The invention discloses a gap avoiding method among semiconductors of different materials, which comprises the following steps: forming W layer with Ti-TiN-W stacked metal layer LM1 on the polysilicon touching piston; forming the second borophosphor silicate glass (BPSG) layer barrier layer on the polysilicon touching piston to prevent erosion LM1 layer with chlorine ion from eroding polysilicon touching piston. The invention can avoid gap between W layer storage unit contacts (CCT), when forming storage unit W layer contact.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for preventing gaps between different materials in the semiconductor device. Background technique [0002] A semiconductor device generally includes contact plugs for connecting various components and memory cell contacts disposed on the contact plugs. If the contact plug and the memory unit contact on it are made of different materials, since the materials for manufacturing the contact plug and the memory unit contact on it are different, when forming the pattern of the memory unit contact on it, The etchant used destroys the material of the contact plug, thereby creating a void between the contact plug and the memory cell contacts located thereon. The gap generated between the contact plug and the contact of the memory cell on it increases the contact resistance between the contact plug and the contact of the memory cell on it, which adversely affec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8239H01L21/768H10B99/00
Inventor 申星勋蒋莉金钟雨
Owner SEMICON MFG INT (SHANGHAI) CORP